Centre National De La Recherche Scientifique

Stmicroelectronics(tours) Sas

Motorola Corporation

Pierre Fau

Bruno Chaudret

Olivier Margeat

Kilian Piettre

Jeremy Cure

Clément Barriere

Celine Nayral

A surface of a silicon substrate is coated with a silicon oxide layer. A manganese silicate layer is then deposited on the silicon oxide layer using a process of performing at least one step of dipping the substrate into a manganese amidinate solution. A copper layer is then deposited on the manganese silicate layer using a process of performing a step of dipping the substrate into a copper amidinate solution. An anneal is performed to stabilize one or both of the manganese silicate layer and copper layer.

Electric connection element manufacturing method

A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, including the step of immersing the substrate in a bath containing a material from the ethoxysilane or siloxane family and a copper or nickel amidinate.

Method for forming a seed layer for the deposition of a metal on a substrate

A method of forming a metal colloid comprising a plurality of particles, each particle comprising a core of a metal, is described. The method comprises the steps of providing an organometallic precursor comprising the metal, combining the organometallic precursor and a solvent, which comprises water molecules, heating the combination of organometallic precursor and solvent so that the organometallic precursor decomposes to form a solution including the metal colloid and by-products, and removing the by-products to provide the metal colloid.

Method of forming metal colloids, metal colloids and method of forming a metal oxide sensitive layer for a chemical sensor device

Growing community of inventors

Toulouse, France

Pierre Fau