Virginia Tech Intellectual Properties Inc

Other

E2v Semiconductors

Pierre E Cambou

Christopher R Fuller

Lionel Fritsch

A multimodal and highly compact human presence detector that includes, on a same silicon chip made using CMOS technology, a first array of pixels, made sensitive to far-infrared radiation by depositing a pyroelectric layer, converting the received far-infrared radiation into electrical charges, juxtaposed with at least one second array of pixels sensitive to visible light, converting the received visible light into electrical charges, and a circuit for reading the charges generated in each of the arrays by the visible light or the far-infrared radiation, the detector further including, on top of the silicon chip, an optical element for focusing the far-infrared radiation on the first array, and an optical element for focusing the visible light on the second array.

Compact human presence detector

The invention relates to dental radiological image sensors for intraoral use. What is described is a method of fabricating an image sensor, comprising steps for the collective production of a structure combining a semiconductor wafer (), bearing a series of image detection circuits, and a fiber-optic plate () fixed to one face of the wafer, the semiconductor wafer being thinned in a step subsequent to the formation of the image detection circuits on the wafer, and external access contact pads () are produced on that face of the wafer which is not fixed to the fiber plate, said contact pads being for controlling the circuits and for receiving image signals coming from the sensor, the fiber-optic plate having a thickness such that it provides most of the mechanical integrity of the structure once the wafer has been thinned, and to do so right to the end of the collective fabrication, the assembled structure consisting of the wafer and the plate being subsequently diced into individual chips.

Dental intraoral radiological image sensor with a fiber-optic plate

The active/passive absorber for extended vibration and sound radiation control includes principally two layers. The first layer has a low stiffness per unit area which allows motion in the direction perpendicular to its main plane. The second layer is principally a mass layer. These two combined layers have a frequency of resonance close to one of the main structure. The dynamic behavior of the coupled system makes the active/passive absorber a passive absorber; however, the first layer can be electrically actuated to induce motion in the direction perpendicular to its main plane. This addition property induces and/or changes the motion of the mass layer and therefore improves the dynamic properties of the active/passive absorber system. The acive/passive absorber can have multiple mass layers and multiple elastic layers stacked one on top of the other. In addition, the mass layers can be continuous or discretized, and have varying thicknesses and shapes for sections and/or segments in the mass layer.

Active/passive distributed absorber for vibration and sound radiation control

The active/passive absorber for extended vibration and sound radiation control includes principally two layers. The first layer has a low stiffness per unit area which allows motion in the direction perpendicular to its main plane. The second layer is principally a mass layer. These two combined layers have a frequency of resonance close to one of the main structure. The dynamic behavior of the coupled system makes the active/passive absorber a passive absorbe; however, the first layer can be electrically actuated to induce motion in the direction perpendicular to its main plane. This addition property induces and/or changes the motion of the mass layer and therefore improves the dynamic properties of the active/passive absorber system.

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Champagne, France

Pierre E Cambou