Alcatel N.v.

Alcatel Optronics

Alcatel

Pierre Doussiere

Isabelle Riant

Leon Goldstein

Jean-Yves Emery

Francois Brillouet

Jean-Louis Lievin

Christine Labourie

Lionel Le Gouezigou

Jean-Francedillaois Vinchant

Thomas Ducellier

Helene Sillard

Jean Barrau

An integrated optical component having a first section (S ) including a wave guide ( ) perpendicular to an output facet (P) of the component, a termination (T) of the wave guide being coupled to this facet, and including a second section (S ) upstream from the first section and capable of being interfered with by the signal reflected by the said facet and guided by the wave guide. The guide termination (T) includes an inclined guiding section ( ) and a laterally non-guiding section ( ) leading to this facet (P).

Integrated optical component

Semiconductor optical amplifier

In a laser device, notably for optical pumping, the wafer includes an expansion segment adjacent the exit to prevent degradation of the exit facet of the semiconductor wafer that constitutes the amplifying part of the laser. The other facet is reflective and a Bragg grating is formed in a coupling fiber disposed near the exit facet. Applications include optical pumping of erbium-doped fiber amplifiers.

Laser device, notably for optical pumping, and method of fabricating it

The invention concerns an optical waveguide transition and its fabrication method, enabling coupling between a buried optical waveguide and a ridged optical waveguide. The transition structure is formed during etching of a layer containing the buried optical waveguide, the transition area being formed by adiabatically increasing the lateral dimensions of the buried waveguide. Top layers are deposited on the buried waveguide and its widened structure in the transition area, and the ridged optical waveguide is fabricated with one part on top of the transition area. Coupling of the respective propagation modes in the buried and ridged waveguides is effected by mode adaptation in the region between the two waveguide structures in the transition area. The transition of the invention is made in two conventional epitaxy steps.

Optical waveguide transition and method of fabricating it

A semiconductor substrate includes an active waveguide to guide optical signals to be amplified occupying signal channels within a gain band of the waveguide. A stabilizer system comprises two Bragg reflectors tuned to a resonant wavelength in the gain band but outside the signal channels. It includes a gain segment in a resonant cavity. Two rejector Bragg reflectors sandwiching the resonant cavity between them are tuned to the resonant wavelength. Applications include telecommunication systems.

Optical amplifier with low crosstalk and component including this

In a method of manufacturing a planar buried heterojunction laser a semiconductor structure is etched to delimit a laser stripe upstanding on a confinement layer. Lateral layers surround the laser stripe to constitute the planar buried heterojunction laser. They are formed by a non-selective growth method not only at the sides of said stripe but also on top of said stripe to create a parasitic projection. These layers and the projection are subsequently covered with a contact localizing layer. The projection is then removed to form a contact window in the contact localizing layer for localizing an electrical contact on top of the laser stripe. The invention finds a particular application in the manufacture of lasers for fiber optic telecommunication systems.

Method of manufacturing a planar buried heterojunction laser

Growing community of inventors

Saint Germain Les Arpajons, France

Pierre Doussiere