Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics International N.v.

Thomson Multimedia S.a.

Pierre Dautriche

Jean-Francois Carpentier

Kallol Chatterjee

Pierre Busson

Sylvain Engels

Patrice Garcia

Nitin Kumar Gupta

Vinod Kumar

Richard P Fournel

Pierre Bar

Sylvain Joblot

Saiyid Mohammad Irshad Rizvi

Paras Garg

Nitin Agarwal

Sébastien Pruvost

David Petit

Sebastien Pruvost

Thierry Rouzier

Pradeep Kumar Badrathwal

Junaid Yousuf

According to one aspect, an embodiment radio frequency receiver device comprises an input interface configured to receive a radio frequency signal of a given type and convert same into an electric signal, a detector configured to detect at least one voltage level in the electric signal, a pulse generator configured to generate at least one pulse train representative of the voltage levels detected, and a processing unit configured to determine the type of the radio frequency signal from the at least one pulse train.

Device and method for receiving data in a radio frequency transmission

A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on a printed circuit board by bumps; an integrated circuit chip assembled on the upper surface of the interposer; antennas made of tracks formed on the upper surface of the interposer; and reflectors on the upper surface of the printed circuit board in front of each of the antennas, the effective distance between each antenna and the reflector plate being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.

Integrated millimeter wave transceiver

A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

Method for manufacturing BAW resonators on a semiconductor wafer

A circuit having a centralized PT compensation circuit to provide compensation signals to localized I/O blocks on the chip. Process variations and temperature variations tend to be approximately uniform across an integrated circuit chip. Thus, a single, centralized PT compensation circuit may be used instead of one PT compensation circuit per I/O section as with solutions of the past. Further, the PT compensation circuit may generate a digital code indicative of the effects of process and temperature. Further yet, each section of I/O block may have a local voltage compensation circuit to compensate the voltage variation of the I/O block. The voltage compensation circuit utilizes an independent reference voltage. The reference voltage is generated by the PT compensation circuit, which is placed centrally in the IC chip and hence any need to repeat the reference generation for each I/O block is eliminated.

Operating conditions compensation circuit

A method for manufacturing a semiconductor chip stack device is provided. The method includes forming a first connecting element array on a surface of a first semiconductor chip; forming a second connecting element array on a surface of a second semiconductor chip, the second array comprising more connecting elements than the first array and the pitch of the first array being a multiple of the pitch of the second array; applying the first chip against the second chip; and setting up test signals between the first and second chips to determine the matching between the connecting elements of the first array and the connecting elements of the second array.

Method for manufacturing a semiconductor chip stack device

A variable frequency clock generator. In aspects, a clock generator includes a droop detector circuit configured to monitor a voltage supply to an integrated circuit. If the supply voltage falls below a specific threshold, a droop voltage flag may be set such that a frequency-locked loop is triggered into a droop voltage mode for handling the voltage droop at the supply voltage. In response, a current control signal that is input to an oscillator that generates a system clock signal is reduced by sinking current away from the current control signal to the oscillator. This results in an immediate reduction on the system clock frequency. Such a state remains until the voltage droop has dissipated when the current path is removed for sinking some of the current.

System and method for variable frequency clock generation

A device for synchronizing a reference event of an analog signal, which includes an analog-to-digital converter receiving an input signal, a register receiving the converter output, a phase-locked loop including an oscillator generating several phase-shifted clock signals of same period, a first clock signal clocking the register, a multiplexer receiving the other clock signals on respective inputs, the output of which clocks said converter, and an analysis circuit connected to control the multiplexer according to successive values of the register output.

Device for synchronizing a reference event of an analog signal on a clock

The device has reference current sources (T,, T,, T,) which are arranged in such a way that the sum of the currents flowing through each of the said sources is equal to the input current (I,, I&prime;,) and output current sources (T,, T,, T,), in each of which the current flowing through the reference sources is duplicated and which are arranged in such a way that the sum of the currents flowing through the output sources is equal to the output current (I,, I&prime;,). The number of reference sources (T,, T,, T,) and output sources (T,, T,, T,) which are connected is controlled by the digital signal (,) and determines the gain of the device. Application to the circuit for processing the signals output by a read head of an optical disc reader apparatus.

Amplifier device with digitally controllable gain and optical disc read apparatus incorporating such a device

The present invention relates to a constant current generator including a reference voltage source providing a constant voltage with respect to a first ground; an operational amplifier receiving the constant voltage on a non-inverting input; and a follower transistor controlled by the output of the operational amplifier and connected between an input of a current mirror and a first resistor connected to the first ground. It further includes a second resistor connected between an output of the current mirror and a second ground, the output of the current mirror being also coupled to an inverting input of the operational amplifier; and a filtering circuit connected to reduce or eliminate, in the output signal of the operational amplifier, any high frequency ac component with respect to the first ground.

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Montbonnot, France

Pierre Dautriche