L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

L'air Liquide, Societe Anonyme L'etude Et L'exploitation Des Procedes

Pierre Claverie

Juichi Arai

Jean-Marie Friedt

Masao Kimura

Pierre Jalby

Frederic Rotman

Pierre Karinthi

Eric L Duchateau

Philippe Queille

Sylvie Mellul

Jeome Perrin

A solder composition is applied to the pins of an electronic component. The pins of the component are brought into contact with solder at a soldering station having a bath exposed to a controlled atmosphere of low oxygen content maintained in a hood enclosing at least the surface of the bath. The controlled atmosphere is comprised of at least one neutral gas and a gaseous silicon hydride whose content is between 50.times.10.sup.-6 and 2.times.10.sup.-3 of the volume of the controlled atmosphere. The controlled atmosphere is produced:

Process for the application of solder composition on the pins of

A process for producing a deposit of an inorganic and amorphous protective coating on an organic polymer substrate, the coating comprising compounds in the form of an oxide, nitride, carbide, or alloys thereof, by photosensitized decomposition in the gas phase, which comprises decomposing a gas medium by photosensitized decomposition, including precursors of the elements constituting the deposit of the inorganic and amorphous protective coating to be produced by photonic excitation of an impurity which has been previously introduced into the medium, said decomposition being adapted for producing an indirect transfer of energy to the molecules of the medium, thereby causing the decomposition and subsequent deposition of the these elements onto the substrate.

Process for producing a deposit of an inorganic and amorphous protective

The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

Method of forming refractory metal free standing shapes

Substantially all residual oxidizing gas in a treating atmosphere which is inert or reducing, is eliminated by injecting into the atmosphere a gaseous silicon hydride at a temperature between 50 and 1,600.degree. C. and in amount such that the ratio R of the content of hydride to the content of oxidizing gas to be eliminated is within the range of 1.5 to 20. The rapid action of the trace amounts of hydride injected enables one to control with precision heat treatment processes by maintaining the residual oxidizing gas contents below predetermined very low thresholds.

Processes for the production of a controlled atmosphere for heat

A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

Method of forming a thin copper film by low temperture CVD

The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.

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Boulogne Billancourt, France

Pierre Claverie