France Telecom

Pierre Brouquet

Michel Haond

Maryse Paoli

The invention relates to a process for electrical insulation of conductive or semiconductor materials of a substrate, characterized in that it comprises at least the following steps:

Process for electrical insulation in microelectronics, applicable in

The semiconductor device includes in a semiconductor substrate (1) at least one predetermined region (6) of the substrate intended subsequently to form an active area, uncovered on its upper surface and situated between lateral trenches (7) containing an insulative material including a layer (9) of a planarising first oxide and at least one underlying layer (8) of a conformal second oxide. The insulative material can form on either side of said uncovered predetermined region (6) of the substrate a boss (16) on the plane upper surface of the device (D) less than 1000 .ANG. high.

Method of isolating active areas of a semiconductor substrate by shallow

The semiconductor device comprises in a semiconductor substrate (1) at least one predetermined region (6) of the substrate intended subsequently to form an active area, uncovered on its upper surface and situated between the lateral trenches (7) containing an insulative material including at least one layer of a conformal oxide, the insulative material forming on either side of said uncovered predetermined region of the substrate a boss (16) on the plane upper surface of the device. The height of the boss is less than 1 000 .ANG. and the insulative material can also include planarising oxide.

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Crolles, France

Pierre Brouquet