Centre National De La Recherche Scientifique

Institut National Des Sciences Appliquees De Lyon

Pierre Brosselard

Dominique Tournier

Florian Chevalier

The invention relates to a structure comprising an n-type substrate () having a bottom surface () and a top surface (), a drain (D) contacting the bottom surface () of the substrate (), a first n-type semiconductor region () having a top surface () provided with a contact area (), a source (S) contacting the contact area (), and a second p-type semiconductor region () arranged inside the first semiconductor region () and defining first and second conduction channels (C, C) between the drain and the source, characterized in that said structure comprises first and second metal gratings (G, G), each of which has a portion () contacting the first semiconductor region () so as to form a Schottky junction.

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Villeurbanne, France

Pierre Brosselard