Thomson-csf

E2v Semiconductors

Thomson-csf Semiconducteurs Specifiques

Thomson Composants Militaires Et Spatiaux

Thomas-csf

Teledyne E2v Semiconductors Sas

Pierre Blanchard

Jean P Cortot

Yvon Cazaux

Yves Thenoz

Jacques Chautemps

Pierrick Descure

Didier Herault

Michel Carquet

Sophie Caranhac

Gerard Beal

Patrick Baussand

Laurent Portrait

Philippe Warenbourg

Joel Soquet

The invention relates to the fabrication of electronic circuits on a thinned semiconductor substrate. To produce a connection pad on the back side of the thinned substrate, the procedure is as follows: an integrated circuit is produced on an unthinned substrate, in which a portion of a polycrystalline silicon layer () dedicated for the connection of the pad is provided. The circuit is transferred onto a transfer substrate () and then its back side is thinned. A via is opened in the thinned semiconductor layer () in order to gain access to the polycrystalline silicon; aluminum () is deposited and this layer is etched so as to define a pad which is in contact with the internal interconnects of the integrated circuit by way of the polycrystalline silicon.

Connection pad structure for an image sensor on a thinned substrate

The invention relates to the fabrication of thinned substrate image sensors, and notably color image sensors. After the fabrication steps carried out from the front face of a silicon substrate the front face is transferred onto a substrate. The silicon is thinned, and the connection terminals are produced by the rear face. A multiplicity of localized contact holes are opened through the thinning silicon, in the location of a connection terminal. The holes exposing a first conductive layer () are formed during the front face steps. Aluminum () is deposited on the rear face, in contact with the silicon, with the aluminum penetrating into the openings and coming into contact with the first layer. The aluminum is etched to delimit the connection terminal. Finally, a peripheral trench is opened through the entire thickness of the silicon layer, and this trench completely surrounds the connection terminal.

Thinned image sensor with trench-insulated contact terminals

The disclosure relates to charge-coupled devices taking the form of shift registers and, more specifically, to those working in the MPP (Multi-Pinned Phase) mode, i.e. with high negative polarisation of the electrodes during the phases of waiting or of integration of integration of the photosensitive charges. These registers use a potential barrier created by a P type compensating implantation in a zone 16 located beneath a first electrode of each stage of the register. This barrier separates the stages from one another. To increase the charge storage capacity during the storage phase and the charge transfer capacity during the transfer, it is provided that the compensating implantation of the zone 16 will extend beneath only one part (and not the totality) of the first electrode of each stage of the register. Application to photosensitive image sensors, analog delay lines, charge-coupled analog memories, working in MPP mode during the waiting phases to limit losses of information due to the dark current. FIG. 4.

CCD type semiconductor device

Process for manufacturing integrated circuits with juxtaposed electrodes

Process for manufacturing integrated circuits with very narrow electrodes

This microwave link connects a fixed set of electronic equipment to a mobile set of electronic equipment that can be shifted between two extreme positions, at least one of which is an operating position. The link is, for example, one between a radar transceiver and a radar antenna that can be retracted into a silo. It is constituted by a sequence of rigid rectangular waveguide elements hinged at their ends by means of hinges comprising at least one rotating connector formed by two rectangular-window flanges, fitted together and rotational movable with respect to each other. This rotational connector has two operational positions at 180.degree. with respect to each other where it can transmit microwave power and where the rectangular windows of its flanges coincide, and it assumes one of these operational positions when the movable electronic equipment is in the operating position.

Mobile microwave link using waveguides

The coupling device is of the plug-like switch type in which the plug has three internal conduits separated from one another. These internal conduits enable at least two of the other input conduits to be made to communicate with one another, depending on the angular position of the plug. A device such as this can be used to disconnect a malfunctioning emitter and thus prevent any loss of power.

Device for the coupling of two microwave signal sources with reduction

A device for the injection of electrons into an electron tube, having: a superconductive bar, a first end of which enters the tube, and an electrical supply. The bar acts as a cathode. Two anodes, a main anode and a secondary anode are placed in the tube, respectively in the place where the electrons are collected and in the place where the first end of the bar enters. The electrical supply provides for application of two voltages, a main voltage and a secondary voltage. Electrons are accelerated along the bar through the two voltages and acquire a kinetic energy which is at least equal to the energy of extraction from the superconductor, and are thus ejected outside the bar.

Superconducting device for injection of electrons into electron tubes

According to the invention, a first layer of conductive material (11) is submitted to an incomplete etching operation in the presence of a mask (13). After elimination of the mask, a second layer of conductive material is deposited, and the thus-obtained result is submitted to an etching operation without a mask, so allowing the inter-electrode gaps to be reduced. The process provides a very tight electrode configuration, and is particularly suited to charge-coupled devices.

Process for fabricating small size electrodes in an integrated circuit

A charge transfer device in which, during manufacture, a first upper electrode does not entirely cover a space separating two lower electrodes, and the zone thus left free is filled by a conductive material of the same type as the first upper electrode part. The method according to the invention allows simple manufacture without restrictions as to the positioning of the masks for manufacturing the electrodes, and allows manufacture without covering of the upper and lower electrodes, thereby allowing to reduce the stray capacities.

Charge transfer device and method for producing such a device

A charge transfer memory and its fabrication method are disclosed. The memory has charge transfer shift registers, with four phases and two level of electrodes, and a reading register with two phases and three levels of electrodes. At one end of each shift register, there is a final electrode contiguous with a reading storage electrode of the reading register, which is itself contiguous to a reading transfer electrode. These electrodes are made in a layer, with a second type of doping, of a semiconductor substrate with a first type of doping. Zones with a third type of doping are made facing the transfer electrodes of the reading register. According to the invention, facing the final electrode of each shift register, a zone with a fourth type of doping is made. This zone with a fourth type of doping prevents charges flowing in the reading register from returning to a shift register.

Charge transfer memory and fabrication method thereof

Disclosed are a charge-coupled device with lowering of output potential as well as a method for the fabrication of this device. In a known way, the device comprises, upstream on a semiconducting substrate with a first type of doping (P), a semiconducting layer with a second type of doping (N) and an insulating layer covering the former layer. Pairs of electrodes are formed on the insulating layer. Each pair has a transfer electrode and a storage electrode. Zones with a third type of doping N.sup.+) are made in the layer of a second type (N). A layer with a third type of doping (N.sup.-) is made downstream, in the layer with a second type of doping, and, downstream, there is formed at least one other pair of additional transfer and storage electrodes. A zone with a fourth type of doping (N.sup.--) is made beneath the additional transfer electrode in the layer with a third type of doping (N.sup.-). This pair of additional electrodes and the zone with a fourth type of doping make it possible to obtain the lowering of transfer potential at output.

Charge-coupled device with lowering of transfer potential at output and

A photosensitive semiconductor device is provided comprising transparent gates, whose side walls are made from silicide and which, apart from these side walls, are formed from polycrystalline silicon.

Photosensitive semiconductor device and a method of manufacturing such a

Process of manufacturing a charge transfer device wherein lower electrodes have enlarged portions and narrowed portions which mesh with the mating portions of any adjacent lower electrode, upper electrodes cover the intervals defined between adjacent lower electrodes and at least part of said enlargened portions thereof, these intervals which are not covered by the upper electrodes are subjected to an impurity diffusion.

Charge transfer device and process of manufacturing the same

The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases:

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Echirolles, France

Pierre Blanchard