Lfoundry S.r.l.

Piero Giubilato

Giovanni Margutti

Onorato Di Cola

Angelo Rivetti

Lucio Pancheri

Manuel Dionisio Da Rocha Rolo

This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.

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Conegliano, Italy

Piero Giubilato