Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Piero Gamarra

Jean-Claude Jacquet

Olivier Jardel

Stéphane Piotrowicz

Raphaël Aubry

A stack along a z-axis for a high-electron-mobility field-effect transistor, comprises: a buffer layer comprising a first semiconductor material comprising a binary, ternary or quaternary nitride compound having a first bandgap, a barrier layer comprising a second semiconductor material comprising a binary, ternary or quaternary nitride compound and having a second bandgap, the second bandgap wider than the first bandgap, a heterojunction between the buffer and barrier layers and, a two-dimensional electron gas located in an XY plane perpendicular to the z-axis and in the vicinity of the heterojunction wherein: the buffer layer comprises a zone comprising fixed negative charges of density per unit volume higher than or equal to 10cm, the zone having a thickness smaller than or equal to 200 nm, the product of multiplication of the density per unit volume of fixed negative charges by the thickness of the zone between 10cmand 3.10cm.

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Palaiseau, France

Piero Gamarra