Micron Technology Incorporated

Stmicroelectronics S.r.l.

Pierluca Guarino

Antonino Mondello

Francesco Tomaiuolo

Marco Ruta

Salvatore Giove

Fabio Indelicato

Maria Luisa Gambina

Giovanni Nunzio Maria Avenia

Carmela Maria Calafato

Edoardo Nocita

Giovanni Pagano

Apparatuses, systems, and methods to perform continuous read operations are described. A system configured to perform such continuous read operations enables improved access to and processing of data for performance of associated functions. For instance, one apparatus described herein includes a memory device having an array that includes a plurality of pages of memory cells. The memory device includes a page buffer coupled to the array and a continuous read buffer. The continuous read buffer includes a first cache to receive a first segment of data values and a second cache to receive a second segment of the data values from the page buffer. The memory device is configured to perform a continuous read operation on the first and second segments of data from the first cache and the second cache of the continuous read buffer.

Apparatuses and methods to perform continuous read operations

A circuit for determining the value of a datum stored in an array memory cell of a non-volatile memory device having at least one reference memory cell of known content. The circuit has a determination stage, which compares an array electrical quantity, correlated to a current flowing in the array memory cell, with a reference electrical quantity, and supplies an output signal indicative of the datum, based on the comparison; and a generator circuit, provided with an input receiving a target electrical quantity correlated to a current flowing in use in the reference memory cell, and an output, which supplies the reference electrical quantity with a controlled value close or equal to that of the target electrical quantity. The generator circuit is provided with a variable generator, and a control unit connected to, and designed to control, the variable generator so that it will generate the controlled value of the reference electrical quantity.

Reading method and circuit for a non-volatile memory device based on the adaptive generation of a reference electrical quantity

Growing community of inventors

Rosolini, Italy

Pierluca Guarino