Luxnet Corporation

Inphi Corporation

Marvell Asia Pte., Ltd.

Pi-Cheng Law

Radhakrishnan L Nagarajan

Peng-Chih Li

Hua-Hsin Su

Po-Chao Huang

Hsing-Yen Lin

Yi-Ching Chiu

Chung-Hsin Fu

Ho-I Chen

Fang-Jeng Lin

Yu-Chun Fan

Ya-Hsin Deng

A packaged transmitter device includes a base member comprising a planar part mounted with a thermoelectric cooler, a transmitter, and a coupling lens assembly, and an assembling part connected to one side of the planar part. The device further includes a circuit board bended to have a first end region and a second end region being raised to a higher level. The first end region disposed on a top surface of the planar part includes multiple electrical connection patches respectively connected to the thermoelectric and the transmitter. The second end region includes an electrical port for external connection. Additionally, the device includes a cover member disposed over the planar part. Furthermore, the device includes a cylindrical member installed to the assembling part for enclosing an isolator aligned to the coupling lens assembly along its axis and connected to a fiber to couple optical signal from the transmitter to the fiber.

Small form factor transmitting device

A method for increasing the bandwidth of an electroabsorption modulator (EAM) includes the following steps. First, a plurality of p-i-n active waveguides for the EAM are defined on a p-i-n optical waveguide forming an EAM having a shorter p-i-n active waveguide length. Then, the bandwidth of the EAM can be increased. Second, the high-impedance transmission lines are used in series to connect the EAM sections to reduce the microwave reflection and then increase the device bandwidth. Finally, the impedance-controlled transmission lines for the signal input and output can not only reduce the parasitic effects resulting from packaging, but also reduce the microwave reflection resulting from the impedance mismatch at the device input and load.

Method for increasing EAM bandwidth, component structure and manufacturing process thereof using plural p-i-n waveguides serially connected by high-impedance transmission lines

The heat dissipation structure of a horizontal optical-communication sub-assembly is provided, which includes a T-shaped header, a circuit board and a heat-dissipating support insert. The T-shaped header includes a base and a tongue. The tongue is disposed on one side of the base and is perpendicular to the base. The base includes a first through hole and a second through hole. The first through hole is above the tongue and the second through hole is below the tongue and opposite to the first through hole. One end of the circuit board penetrates through the first through hole and disposed on the tongue. The heat-dissipating support insert includes a supporting block and an extension portion. The extension portion is disposed on one side of the supporting block and penetrates through the second through hole to extend to the bottom of the tongue.

Heat dissipation structure of horizontal optical-communication sub-assembly

An optical transmitter with a heat dissipation structure is provided. The heat dissipation structure comprises a substrate and an optical transmitter unit. The substrate comprises a base body, a heat dissipation well disposed on the base body, and a thermal conductive block inserted into and fixed to the heat dissipation well. The thermal conductive block has on one side thereof a heat guiding plane. The optical transmitter unit comprises a heat dissipating substrate directly disposed on the heat guiding plane, and a laser diode directly disposed on the heat dissipating substrate. The laser diode features an active region whose height is lowered to shorten a heat conduction path wherein heat is transferred from the active region through the heat dissipating substrate to the heat guiding plane. The heat already transferred to the heat guiding plane is transferred horizontally by the thermal conductive block to the base body which encloses the heat dissipation well.

Optical transmitter with a heat dissipation structure

The present invention relates to a two-end driving, high-frequency sub-substrate structure, comprising a sub-substrate body, wherein: the sub-substrate body has an upper side provided with a first signal pad area and a second signal pad area, the first signal pad area and the second signal pad area are symmetric with respect to each other, each of the first signal pad area and the second signal pad area extends from one of two lateral portions of the sub-substrate body in an extending direction toward a center of the sub-substrate body and terminates in an end, the end of the first signal pad area is adjacent to but spaced from the end of the second signal pad area, the first signal pad area is configured for supporting a semiconductor chip provided thereon, the second signal pad area is provided with a jumper wire connected to an electrode of the semiconductor chip, there are two grounding pad areas provided respectively on two lateral sides of the first signal pad area and the second signal pad area and constituting a portion of a coplanar waveguide, the sub-substrate body has an inner layer or bottom side that is provided with a grounding layer or combined with a grounding layer.

Two-end driving, high-frequency sub-substrate structure and high-frequency transmission structure including the same

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Auburn Hills, MI, United States of America

Pi-Cheng Law