Other

Ahbee 1, L.p.

Abhee 1, L.p.

Ahbee 2, L.p.

Phuc Van

Vladimir Faifer

Yuen Lim

Wojciech Walecki

Michael I Current

Timothy Wong

Alexander Pravdivtsev

A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Non contact method and apparatus for measurement of sheet resistance of P-N junctions

Non contact method and apparatus for measurement of sheet resistance of p-n junctions

This invention is a device for measuring of absolute distances by means of low coherence optical interferometry. The proposed apparatus eliminates thermal of the conventional fiber optic interferometers caused by variation of the refractive index of the optical fiber material to change of the temperature.

Temperature insensitive low coherence based optical metrology for nondestructive characterization of physical characteristics of materials

A method and apparatus for determining the thickness of slabs of materials using an interferometer.

Determining thickness of slabs of materials by inventors

A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of a surface p-n junction and its leakage current is disclosed. The apparatus comprises an alternating light source optically coupled with a transparent and conducting electrode brought close to the junction, a second electrode placed outside of the illumination area, and a third grounded electrode surrounding the first and second electrodes. For measurements of junction capacitance, a calibration wafer with known sheet resistance is used to provide reference photovoltage signals. Using the measurement of the junction photovoltage (JPV) signals from the illuminated area and outside this area for calibration and test wafers at different light modulation frequencies, p-n junction sheet resistance and conductance (leakage current density) are determined.

Non-contact method and apparatus for measurement of sheet resistance and leakage current of p-n junctions

An apparatus and method is provided for determining the minority carrier diffusion length from the back side of the wafer within predetermined areas using pattern recognition system. In particular embodiments SPV probe includes transparent and non-transparent electrodes, to provide measurement of SPV and in area larger than optical beam and to provide accurate determination of diffusion length with spatial resolution &#x3c;1 mm. The apparatus includes the ability to measure diffusion length from the areas under special areas within scribe line of patterned wafer. This apparatus and method provides a determination of the diffusion length to control metal contamination in product including patterned wafers including measurement within scribe lines and full wafer mapping.

Determination of minority carrier diffusion length in solid state materials

An apparatus for the automatic testing the adhesion characteristics of thin film and coating to silicon wafers, and the processing of the data obtained thereby to present to the user a rapid and accurate forecast of the thin film's behavior in a selected processing environment. The apparatus of the invention heats and cools samples while automatically monitoring for debonding. Information collected from the optical and thermal devices are processed by computer for analysis and recorded for cataloging. Information is collected and processed over time while samples are subjected to selected temperature environments to provide a data base of adhesion characteristics of thin films and coatings.

Method and apparatus for adhesion testing of thin film materials

An apparatus is disclosed for in situ characterizing and quantifying physical properties of thin film materials over time and in various environments. Through the utilization of multiple probes and sensors, and the processing of the data, a rapid and accurate forecast of the material's behavior in a selected environment may be obtained. The present invention scans for a variety of properties, including film stress, film thickness, desorption, reflectivity, and resistivity. Photodetectors are used to collect reflected light which is processed by computer for analysis, while simultaneously processing data collected from the probes and sensors placed within and without the testing chamber. Data is collected and analyzed over time while sample materials are subjected to selected environments, including thermal cycling and gaseous or vacuum environments, using multiple probes according to the user's industry needs.

Growing community of inventors

San Jose, CA, United States of America

Phuc Van