Hitachi Global Storage Technologies Netherlands B.v.

International Business Machines Corporation

Hitachi Global Storage Technologies

Phong V Chau

Mustafa Pinarbasi

Hua Ai Zeng

James Mac Freitag

Howard Gordon Zolla

Patrick Rush Webb

A method of manufacturing a GMR, TMR or CPP GMR sensor having a smooth interface between magnetic and non-magnetic layers to improve sensor performance by exposing a layer to a low energy ion beam prior to depositing a subsequent layer.

Method of manufacturing high sensitivity spin valve designs with ion beam treatment

A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

Method for improving hard bias properties of layers in a magnetoresistive sensor

An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer

A top spin valve sensor includes an iridium manganese (IrMn) pinning layer which has been formed by ion beam sputter deposition. The magnetoresistive coefficient of the spin valve sensor is increased by employing an iridium manganese oxide (IrMnO) seed layer between a free layer of the spin valve sensor and a first read gap layer of the read head. The free layer is preferably a nickel iron free film located between first and second cobalt iron (CoFe) free films.

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Phong V Chau