Unisantis Electronics Singapore Pte. Ltd.

Phillipe Matagne

Fujio Masuoka

Hiroki Nakamura

Nozomu Harada

Yoshiaki Kikuchi

The method for producing a pillar-shaped semiconductor device includes a step of forming a tubular SiOlayer that surrounds side surfaces of a Playerand Nlayersandformed on a Si pillarby epitaxial crystal growth, forming an AlO layeron a periphery of the SiOlayer, forming a tubular contact hole by etching the tubular SiOlayer using the AlO layeras a mask, and filling the contact hole with W layers, andto form tubular W layers, and(including a buffer conductor layer) that have an equal width when viewed in plan and are in contact with side surfaces of the tops of the Playerand the Nlayersand

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Leuven, Belgium

Phillipe Matagne