Motorola Corporation

Phillipe Dupuy

Robert W Baird

Steven L Merchant

A field effect transistor ( ) has an array of transistors ( ) made up of bonding pads ( ) and sub-arrays of transistors ( ). The bonding pads ( ) are distributed between the sub-arrays of transistors ( ) to reduce the maximum temperature that any portion of the FET ( ) is exposed to while the FET ( ) is in a conducting state. A similar effect can be appreciated by adjusting the threshold voltage or pinch-off resistance of the transistors in a portion ( ) of an array of transistors ( ).

Field effect transistor having differing power dissipation across an array of transistors

Field effect transistor and method of making

A field effect transistor (30) has an array of transistors (31) made up of bonding pads (45-47) and sub-arrays of transistors (41-43). The bonding pads (45-47) are distributed between the sub-arrays of transistors (41-43) to reduce the maximum temperature that any portion of the FET (30) is exposed to while the FET (30) is in a conducting state. A similar effect can be appreciated by adjusting the threshold voltage or pinch-off resistance of the transistors in a portion (101) of an array of transistors (95).

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Toulouse, France

Phillipe Dupuy