Motorola Corporation

Phillip W Dahl

Jay Paul John

James Albert Kirchgessner

John W Steele

Richard W Mauntel

Vida Ilderem Burger

Michael H Kaneshiro

David L Stolfa

Ik-Sung Lim

A method of manufacturing a heterojunction BiCMOS IC. ( ) includes forming a gate electrode ( ), forming a protective layer ( ) over the gate electrode, forming a semiconductor layer ( ) over the protective layer, depositing an electrically insulative layer ( ) over the semiconductor layer, using a mask layer ( ) to define a doped region ( ) in the semiconductor layer and to define a hole ( ) in the electrically insulative layer, forming an electrically conductive layer ( ) over the electrically insulative layer, using another mask layer ( ) to define an emitter region ( ) in the electrically conductive layer and to define an intrinsic base region ( ) and a portion of an extrinsic base region ( ) in the electrically conductive layer, and using yet another mask layer ( ) to define another portion of the extrinsic base region in the electrically conductive layer.

Method of manufacturing a heterojunction BiCMOS integrated circuit

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Gilbert, AZ, United States of America

Phillip W Dahl