Cabot Microelectronics Corporation

Nalco Chemical Company

Ondeo Nalco Company

Baxter International Inc.

Baxter Healthcare Sa

Cmc Materials, Inc.

Phillip W Carter

Steven Grumbine

Timothy P Johns

Steven Kraft

Jeffrey P Chamberlain

David Schroeder

Jian Zhang

Kevin J Moeggenborg

Shoutian Li

Andrew Wolff

Benjamin Petro

Isaac K Cherian

Francesco De Rege Thesauro

Andrew J Dunham

Peter E Reed

Patrick G Murray

Renjie Zhou

Larry E Brammer, Jr

Ming-Shih Tsai

Zhan Chen

Gregory H Bogush

David W Boldridge

Kristin Hayes

William J Ward

Jin-Shan Wang

Brian L Mueller

Jiansheng Tang

John David Morris

Ronald V Davis

Paul Young

Robert Vacassy

Homer Z Chou

Dustin Christopher Cawthon

Vadim V Krongauz

John-Bruce Devault Green

Michael A Kamrath

Martin J Coffey

Mary Cavanaugh

Sudeep Pallikkara Kuttiatoor

Elise Sikma

Andrei S Zelenev

Francesco M De Rege

Joseph D Hawkins

Jeffrey Cross

Andrew R Wolff

Nathan A Vandesteeg

Sameer B Agarwal

Kyle Miller

Mukesh Desai

Farhana Khan

Jason Seabold

Kuen-Min Chen

Renhe Jia

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a pH of about 4 to about 10. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Alternative oxidizing agents for cobalt CMP

The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof.

Corrosion inhibitors and related compositions and methods

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NRRRwherein R, R, and Rare independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R, R, and Rare hydrogen; dicarboxyheterocycles; heterocyclylalkyl-&#x3b1;-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-&#x3b1;-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Cobalt polishing accelerators

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C-Caliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Cobalt dishing control agents

The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C-Caliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Cobalt inhibitor combination for improved dishing

The invention provides methods for planarizing or polishing a metal surface. The method comprises a composition comprising an abrasive, cesium ions, and a liquid carrier comprising water.

Metal cations for initiating polishing

The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing Cheterocycle and a Calkylamine, and a liquid carrier comprising water.

Iodate-containing chemical-mechanical polishing compositions and methods

The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Compositions for CMP of semiconductor materials

The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).

Oxidation-stabilized CMP compositions and methods

A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKof about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.

Method of polishing a silicon-containing dielectric

Methods for processing substrate surfaces carrying coatings comprising a metal are disclosed. The methods involve providing a substrate surface having a coating comprising a metal, and exposing the substrate surface to a mixture including an oxidizing agent and an anion.

Methods for processing substrates having an antimicrobial coating

The invention provides a chemical-mechanical polishing composition comprising an abrasive, metal ions (M) having a M-O&#x2014;Si bond energy equal to or greater than about 3 kcal/mol, and water. The invention further provides a method for polishing a substrate using the aforementioned chemical-mechanical polishing composition.

Metal ion-containing CMP composition and method for using the same

The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.

Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Compositions and methods for CMP of semiconductor materials

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Naperville, IL, United States of America

Phillip W Carter