Texas Instruments Corporation

Phillip R Coffman

Masood Murtuza

Patricia Beauregard Smith

Charles Anthony Odegard

Marvin Wayne Cowens

Vinu Yamunan

Non-metallic buckle

A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Adhesion by plasma conditioning of semiconductor chip

Adhesion by plasma conditioning of semiconductor chip surfaces

An organically modified dielectric network structure ( ) and solid halide-containing material ( ) are co-deposited using a chemical vapor deposition process. The solid halide-containing material ( ) is then sublimated leaving a porous dielectric ( ). An encapsulating layer ( ) is formed over the porous dielectric ( ) to seal any remaining halide-containing material Within the porous dielectric ( ).

Hybrid porous low-K dielectrics for integrated circuits

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Rowlett, TX, United States of America

Phillip R Coffman