USA As Represented by Secretary of the Navy

United States of America As Represented by the Administrator of Nasa

Harvard College

Rochester Institute of Technology

The United States of America As Represented by the Administrator of the

Triquint Semiconductor Corporation

Ohio Aerospace Institute

Sverdrup Technology, Inc.

Glenn Research Center

Phillip P Jenkins

David Scheiman

Robert J Walters

Donald L Chubb

Ryne P Raffaelle

Stephanie Castro

David M Wilt

Andrew R Barron

Andrew N MacInnes

Aloysius F Hepp

Michael J Krasowski

Raymond Hoheisel

Lawrence C Greer

Michael K Yakes

Justin Lorentzen

Woojun Yoon

Joseph M Flatico

Cory D Cress

Jeffrey H Warner

Michael B Power

María González

Elisa Antolín Fernández

Esther López Estrada

Louise C Hirst

Geoffrey A Landis

Kenneth Schmieder

Antonio Marti Vega

A method includes placing an imaging device in contact with a sample, irradiating the sample via an illuminator such that radiation scatters off of the structure, and providing the scattered radiation to a detector to generate a digital video signal. A processor then performs various operations including subtracting a sum of a black state value and a user-defined black level clamping value from the digital video signal to create subtracted image data, substituting negative values in the subtracted image data with a reference value to create modified image data, and amplifying the modified image data by a user-defined gain to create contrast enhanced image data.

Two and three-dimensional near infrared subcutaneous structure imager using realtime nonlinear video processing

A spectral radiometer system, measures incoming light intensity and spectral distribution in different wavelength-bands. An additional data storage device allows recording of the measured data. The inclusive sensor system yields very high sensitivity to incoming light. Furthermore, outstanding linearity of the detector response over several orders of magnitude of incoming light is achieved. Additional benefits are ultra low power consumption and minimum size. The sensor system can be used in remote solar radiation monitoring applications like mobile solar power units as well as in long-term environmental monitoring systems where high precision and low power consumption is a necessity.

Ultra low power solid state spectral radiometer

A method for making an ultra-thin, flexible crystalline silicon solar cell from thick, inflexible cells. A thick, inflexible cell having a plurality of electrical contacts on the back side thereof is adhered to a mount by means of a temporary bonding adhesive tape and a thickness of the mounted stack. A thickness of the bonding tape and the back-side contacts is determined and compared to a desired thickness of the final cell. Excess material is ground from the front side of the stack to obtain a thinned stack having the desired thickness and the thinned stack is removed from the mount to produce an ultra-thin, flexible rear-contact Si solar cell having a total thickness of less than 80 &#x3bc;m and a bending radius of less than 20 mm. The front surface can be textured, with a passivation layer and/or a dielectric layer being deposited thereon.

Ultra-thin flexible rear-contact Si solar cells and methods for manufacturing the same

A novel, low cost method for manufacturing flexible crystalline ultra-thin Si solar cells using previously fabricated inflexible crystalline Si solar cells. A stack of metal layers is coated onto a front side of previously completed inflexible crystalline Si solar cells. The stack serves as a bonding layer as well as an electrically conducting layer between the inflexible solar cell and the carrier substrate. The front side of the coated inflexible Si solar cell is bonded onto the carrier substrate. Back side layers from the starting inflexible solar cell are removed, as is much of the base layer, so that only a thin base layer remains, with the thin base layer and emitter region having a total thickness of between 1 &#x3bc;m and 30 &#x3bc;m and the final cell having a total thickness of about 10 to about 125 &#x3bc;m.

Flexible crystalline ultra-thin Si solar cells

Photovoltaic (PV) device comprising an ultra-thin radiation-tolerant PV absorber mounted on a flexible film having an embedded persistent phosphor and having a plurality of interdigitated top and bottom contacts on the top of the PV absorber. The PV absorber is ultra-thin, e.g., typically having a thickness of 300 nm or less for a III-V-based absorber. The phosphor absorbs some of the photons incident on the device and then discharges them for use by the device in generating electrical power during times when the device is not illuminated by the sun.

Ultra-thin, flexible and radiation-tolerant eclipse photovoltaics

A semiconductor device that utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.

Capacitive infrared photodetector comprising a quantum dot layer

An imager is provided for viewing subcutaneous structures. In an embodiment of the invention, the imager includes a camera configured to generate a video frame, and an adaptive nonlinear processor. The adaptive nonlinear processor is configured to adjust a signal of the video frame below a first threshold to a maximum dark level and to adjust the signal of the video frame above a second threshold to a maximum light level. The imager further includes a display, configured to display the processed video frame.

Two and three dimensional near infrared subcutaneous structure imager using real time nonlinear video processing

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Alpha voltaic batteries and methods thereof

A rare earth optical temperature sensor is disclosed for measuring high temperatures. Optical temperature sensors exist that channel emissions from a sensor to a detector using a light pipe. The invention uses a rare earth emitter to transform the sensed thermal energy into a narrow band width optical signal that travels to a detector using a light pipe. An optical bandpass filter at the detector removes any noise signal outside of the band width of the signal from the emitter.

Rare earth optical temperature sensor

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Minority carrier device comprising a passivating layer including a Group

A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.

Metal, passivating layer, semiconductor, field-effect transistor

A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.

Chemical vapor deposition from single organometallic precursors

Growing community of inventors

Cleveland, OH, United States of America

Phillip P Jenkins