Freescale Semiconductor,inc.

Phillip J Stout

Marius K Orlowski

Olubunmi O Adetutu

A semiconductor process and apparatus uses a predetermined sequence of patterning and etching steps to etch a gate stack () formed over a substrate (), thereby forming an etched gate () having a vertical sidewall profile (). By constructing the gate stack () with a graded material composition of silicon-based layers, the composition of which is selected to counteract the etching tendencies of the predetermined sequence of patterning and etching steps, a more idealized vertical gate sidewall profile () may be obtained.

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Austin, TX, United States of America

Phillip J Stout