USA As Represented by Secretary of the Navy

The Ohio State University

University of Delaware

Phillip E Thompson

Karl D Hobart

Paul Berger

Francis J Kub

Henry F Gray

Jonathan L Shaw

Mark E Twigg

Niu Jin

Roger Lake

Sean L Rommel

Nicolas A Papanicolaou

Harry B Dietrich

Paul R Berger

Sung-Yong Chung

J Bradley Boos

A Si-based diode () is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction () having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (). In some embodiments, at least one delta doping () is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes ().

Silicon-based backward diodes for zero-biased square law detection and detector arrays of same

Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

Method of making interband tunneling diodes

A silicon-based interband tunneling diode () includes a degenerate p-type doping () of acceptors, a degenerate n-type doping () of donors disposed on a first side of the degenerate p-type doping (), and a barrier silicon-germanium layer () disposed on a second side of the degenerate p-type doping () opposite the first side. The barrier silicon-germanium layer () suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings ().

Si/SiGe interband tunneling diode structures including SiGe diffusion barriers

Si-based resonant interband tunneling diodes and method of making interband tunneling diodes

An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the substrate in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.

Automatically sharp field emission cathodes

An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the subste in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.

Atomically sharp field emission cathodes

A photoconductive semiconductor device having a source, a drain, and a photosensitive channel therebetween. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide.

Dual active layer photoconductor

An InP wafer, comprising a S.I. InP substrate, a n-type InP active layer disposed on the substrate and oxygen implanted isolation regions disposed in the active layer.

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Springfield, VA, United States of America

Phillip E Thompson