Dow Global Technologies LLC

Rohm & Haas Electronic Materials LLC

University of California

Micron Technology Incorporated

University of Minnesota

Dow Silicones Corporation

Rohm and Haas Electronic Materials Korea Ltd.

Phillip Dene Hustad

Peter Trefonas, Iii

Roger L Kuhlman

Edmund M Carnahan

Jong Keun Park

Mingqi Li

Timothy Todd Wenzel

Benjamin C Poon

Jeffrey D Weinhold

Valeriy V Ginzburg

David D Devore

Yunwa Wilson Cheung

Daniel J Arriola

Shih-Wei Chang

Colin Li Pi Shan

Kim Louis Walton

Jin Wuk Sung

Jieqian Zhang

Vipul Jain

Gary Robert Marchand

Thomas P Clark

Erin B Vogel

Sara B Klamo

David R Wilson

Gordon R Roof

Rahul Sharma

Pamela J Stirn

Xinyu Gu

James C Stevens

Daniel J Murray

Nahrain E Kamber

Eddy I Garcia-Meitin

Brian A Jazdzewski

Pankaj Gupta

Huaxing Zhou

David D Graf

Patricia L Roberts

Angela N Taha

Cheng-Bai Xu

Colin LiPiShan

Glenn H Fredrickson

Cynthia Pierre

Francis J Timmers

Deyan Wang

Lonnie G Hazlitt

Mehmet Demirors

Dan B Millward

Rajen M Patel

Steven Swier

Pradeep Jain

Xue Chen

John Bernard Horstman

Adam L Olson

Frank Steven Bates

Marc Andrew Hillmyer

Kaveri Jain

William R Brown

Robert D J Froese

Seema V Karande

John W Kramer

Sylvie Y Desjardins

Liam P Spencer

Didem Oner-Deliormanli

Ho Seop Eom

Joseph N Coalter, Iii

Zachary Kean

Ken Kawamoto

Anthony J Castelluccio

Bethany M Neilson

Nik Mirin

Christopher Nam Lee

David W Fuchs

James W Thackeray

Jerzy Klosin

John Robert Briggs

Cong Liu

Duane R Romer

Emad Aqad

Richard E Campbell, Jr

Jin Hong Park

Shintaro Yamada

Chunyi Wu

Theresa J Hermel-Davidock

Endre Szuromi

Christopher D Gilmore

Kathleen M O'Connell

XiaoHua Qiu

Jibin Sun

Jesus Nieto

Jae Hwan Sim

Nathan J Wiker

Jae-Bong Lim

Mark Thomas Berard

Wayde V Konze

Joshua A Kaitz

Amy M Kwok

Marc A Springs

Choong-Bong Lee

Henry George Heck

Jung Kyu Jo

The present disclosure provides a multilayer film. The multilayer film includes at least two layers including a sealant layer and a second layer in contact with the sealant layer. The sealant layer contains (A) a first ethylene-based polymer having a density from 0.900 g/cc to 0.925 g/cc and a melt index from 0.5 g/10 min to 30 g/10 min; and (B) a polyethylene-polydimethylsiloxane block copolymer having a weight average molecular weight from 1,000 g/mol to 10,000 g/mol. The second layer contains a second ethylene-based polymer.

Multilayer films and laminates containing slip agents

A polyolefin-polydiorganosiloxane block copolymer may be prepared by Piers-Rubinsztajn reaction.

Polyolefin-polydiorganosiloxane block copolymer and method for the synthesis thereof

A polyolefin-polydiorganosiloxane block copolymer may be prepared by hydrosilylation reaction.

Polyolefin-polydiorganosiloxane block copolymer and hydrosilylation reaction method for the synthesis thereof

Disclosed herein is a method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a reactive moiety that is operative to react with a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition.

Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same

Disclosed herein is a pattern forming method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a bottlebrush polymer; and where the bottlebrush polymer comprises a polymer that has a lower or a higher surface energy than the block copolymer; and a solvent; and annealing the composition to facilitate domain separation between the first polymer and the second polymer of the block copolymer to form a morphology of periodic domains formed from the first polymer and the second polymer; where a longitudinal axis of the periodic domains are parallel to the substrate.

Copolymer formulation for directed self-assembly, methods of manufacture thereof and articles comprising the same

Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer comprising a polymer wherein the surface tension of the polymer with the first polymer and the surface tension of the polymer with the second polymer are both lower than the surface tension between the first polymer and second polymer; where the additive polymer comprises a reactive functional moiety that forms a bond or a complex or a coordinate with the substrate upon being disposed on the substrate; where the reactive functional moiety is unreacted when it is a part of the composition; and a solvent.

Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200&#xb0; C.

Methods for manufacturing block copolymers and articles manufactured therefrom

Disclosed herein is a block copolymer comprising a first block derived from a cyclo-alkyl vinyl monomer, a hydrogenated vinyl aromatic polymer or a hydrogenated vinyl pyridine polymers; and a second block derived from an acrylate monomer. Disclosed herein too is a method comprising reacting a first block derived from a cyclo-alkyl vinyl monomer, a hydrogenated vinyl aromatic polymer or a hydrogenated vinyl pyridine polymers with an initiator to form a macroinitiator; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing an acrylate monomer; and where the block copolymer has a chi parameter of greater than or equal to about 0.05, when measured at a temperature of 200&#xb0; C. to 210&#xb0; C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

Poly(cyclohexylethylene)-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same

A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.

Underlayer composition and method of imaging underlayer

Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Neutral layer polymers, methods of manufacture thereof and articles comprising the same

Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Pattern treatment methods

A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.

Underlayer composition and method of imaging underlayer composition

Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.

Block copolymers and pattern treatment compositions and methods

Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; and an additive polymer; where the additive polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers.

Growing community of inventors

Manvel, TX, United States of America

Phillip Dene Hustad