Commissariat a L'energie Atomique

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Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (rousset) Sas

Philippe Thony

Philippe Coronel

Serge Gidon

Nicolas Chaintreuil

Engin Molva

Bernard Ferrand

Marc Rabarot

Corinne Borel

Jean-Jacques Aubert

Eric Pilat

Jessy Bustos

Pierre Mur

Laurent Fulbert

Eric Gerritsen

Mathieu Baudrit

Paul Messaoudi

Roger Accomo

Guy LaBrunie

Muriele Bergeon

Kavita Surana

Vincenzo Sanzone

Fabrice Claudon

Yoann Le Blevennec

Lorenza Bianco

José-Maria Vega De Seoane

David Bertrand

François Quesnel

The invention relates to a reflective device for a photovoltaic module formed by a plurality of bifacial photovoltaic cells or rows of said cells spaced apart from one another, each cell having an active front face and an active rear face that can capture photons from incident light rays falling on the front and rear faces. The device comprises at least one reflective module to be placed under the cells substantially in line with the gap(s) separating two adjacent cells or two rows of adjacent cells. The reflective module comprises: a first portion, of which the surfaces that are oriented towards the gap have a first curvature such as to send all or part of the incident photons towards the rear face of the cells; and a second portion mounted on the first portion, of which the surfaces oriented towards the gap have a second curvature such as to send all or part of the incident photons towards the rear face of the cells, the second curvature being different from the first curvature.

Reflective device for a photovoltaic module with bifacial cells

A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index nand at least one second layer of complex refraction index n, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices nand non the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices nand n; deposition and annealing of the layers in accordance with the previously calculated parameters.

Method of manufacturing an optical reflector with semiconductor nanocrystals

A light concentration device includes: a plate including two principal faces and an edge between the two principal faces, a refractive index gradient existing between the two principal faces, and a diffraction grating functioning in reflection or semi-reflection that cooperates with one of the principal faces of the plate having the highest refractive index, the principal face having the lowest refractive index forming a front entry face for the light, at least one exit zone for the light being disposed on the edge.

Flat light concentration device with reduced thickness

A first circuit element, which is reflective, is formed. A first layer, which is attenuating, is formed. above the first circuit element. A second layer, which is transparent, is formed above the first layer to fill an aperture in the first layer. An overlying lithography resist layer is then exposed to a radiation flux level below a development threshold but high enough that a sum of the radiation flux level and a reflected secondary radiation flux level exceeds the development threshold. The lithography resist layer is developed so as to obtain a mask having an opening through which the first and second layers are removed to form a second aperture which is filled to form a second circuit element.

Production of two superposed elements within an integrated electronic circuit

An integrated electronic circuit includes a cavity buried in a substrate. A surface of the substrate has a depression aligned above the buried cavity. The depression is filled with a material selected so that reflection of a lithography radiation on the substrate surface is attenuated. A resist layer is deposited on the circuit and then exposed to the radiation so that those resist portions which are located above the depression and those located away from the depression receive amounts of radiation that are below and above, respectively, the development threshold of the resist. An etching mask is therefore obtained on the circuit, which is aligned with respect to the cavity and its associated surface depression.

Method for the formation of an integrated electronic circuit having a closed cavity

Implementation of ultrahigh frequency emitters and applications to radar and telecommunications

Solid microlaser passively switched by a saturable absorber and its production process

The invention relates to a microlaser cavity (10) having:

Solid microlaser passively switched by a saturable absorber and its

A microlaser having input and output mirrors defining a microlaser cavity, a solid active dielectric medium disposed in the microlaser cavity, and a pumping mechanism which pumps the microlaser and which includes at least one vertical cavity semiconductor laser. The microlaser may also include a microoptical focusing device, passive and/or active cavity switches. A plurality of such microlasers can be assembled to form a bidimensional network.

Solid microlaser with optical pumping by vertical cavity semiconductor

The invention relates to a microlaser cavity switched with the aid of an electrooptical material (54). Electrodes (84, 86) are produced on support elements (80, 82) and the latter are then applied on either side of the electrooptical element. Solid electrodes can also be applied on either side of the electrooptical material.

Electrooptically switched solid microlaser with independent electrodes

The invention relates to a remote gas detection process comprising: the emission of a first radiation (4), at at least one absorption wavelength for the gas to be detected, with the aid of a first switched microlaser, in the direction of a test area (6), the production of a first signal (S), representative of the radiation quantity scattered by said gas in response to the interaction between the molecules or atoms of said gas and said first radiation. The invention also relates to an apparatus for performing this process.

Remote gas detection apparatus having a microlaser

Active-switching laser and microchip laser

Microlaser cavity and externally controlled, passive switching, pulses solid microlaser including a saturable absorber 46 and a device (60, 62) for introducing a beam 56 into the microlaser cavity initiating or starting saturation of the saturable absorber.

Microlaser cavity and externally controlled, passive switching, solid

The invention relates to an optical parametric oscillator characterized in that it comprises an OPO nonlinear material (18) and two mirrors (24, 26) on either side of said nonlinear material and forming an OPO cavity and a switched microlaser (2, 6, 8, 26) for generating an OPO cavity laser pumping beam.

Microlaser-pumped monolithic optical parametric oscillator

The invention relates to a microlaser cavity having an active laser medium and reflection means at the entrance and exit of the cavity, characterized in that the reflection means are dimensioned in such a way that, in the active medium, the size of a pumping beam is at the most equal to the size of a laser beam emitted by the cavity.

Growing community of inventors

Grenoble, France

Philippe Thony