Commissariat a L'energie Atomique

Other

Philippe Spinelli

Michel Bruel

Jean-Christophe Rostaing

Claude Doche

Alain Soubie

Fran&ccedil;ois Coeuret

Sylvain Scotto D'Apolinia

The invention relates to a storage box for an object that is to be protected from physicochemical contamination. The storage box is intended to have low weight, good mechanical strength, a good electrical condition, with a low degassing rate in time with prevention of diffusion of gasses from the external atmosphere into the interior of the box. The inner and/or outer surface of the box's walls are coated with at least one protective layer. The box may be used to store silicon wafers.

Storage box for an object to be protected against physicochemical contamination

In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently high energy level to penetrate the same. The secondary particles are in the gaseous state, the gas occupying an area facing the target. The apparatus for implanting particles in a solid has a target support and a solid target in a vacuum enclosure. It also has a source of high-energy primary particles, which supplies a substantially parallel beam thereof, a source of the secondary particles to be implanted in the target, a means for confining the secondary particles and communicating with the secondary particle source and having a primary opening for receiving the primary particle beam and a secondary opening for ejecting the secondary recoil particles towards the target.

Process and apparatus for implanting particles in a solid

The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.

Process for doping semiconductors

Growing community of inventors

La Tronche, France

Philippe Spinelli