Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Midiagnostics Nv

Philippe Soussan

Eric Beyne

Xavier Rottenberg

Maria Op De Beeck

Pol Van Dorpe

Silvia Armini

Jeonghwan Song

Ingrid De Wolf

Wouter Ruythooren

Koen De Munck

Wenqi Zhang

Giuseppe Fiorentino

Melina Lofrano

Alain Phommahaxay

Lieve Bogaerts

Philippe Muller

Piotr Czarnecki

There is provided an optical system for coupling light into a waveguide. The optical system comprising a coupler arranged at a portion of the waveguide. The coupler has a surface with a grating structure for directing light into the waveguide formed therein. A cladding layer embeds the coupler and an optical path changing structure is formed in the cladding layer. The optical path changing structure has a refractive surface and a reflective surface, each forming an acute angle with respect to the surface of the coupler. Light which enters the optical path changing structure through the refractive surface will be refracted and directed towards the reflective surface. The reflective surface is arranged to reflect the light such that it is directed towards the grating structure of the coupler along a direction suitable for efficient coupling of light into the waveguide.

Optical system for coupling light into a waveguide

A method is disclosed for packaging a device, e.g., for bio-medical applications. In one aspect, the method includes obtaining a component on a substrate and separating the component and a first part of the substrate from a second part of the substrate using at least one physical process inducing at least one sloped side wall on the first part of the substrate. The method also includes providing an encapsulation for the chip. The resulting packaged chip advantageously has a good step coverage resulting in a good hermeticity, less sharp edges resulting in a reduced risk of damaging or infection after implantation and has a relatively small packaged volume compared to conventional big box packaging techniques.

Biocompatible packaging

A method for flip chip bonding a GaN device formed on a silicon substrate is described. The method includes providing a silicon substrate having a GaN device thereon, the GaN device comprising at least one gallium-nitride layer near the silicon substrate and remote from the silicon substrate a dielectric layer comprising at least one via configured to electrically contact the at least one gallium-nitride layer, forming a stiffener layer over the GaN device leaving the at least one via exposed, flip chip bonding the GaN device to a submount, wherein the stiffener layer physically contacts the submount and the submount is electrically connected to the at least gallium-nitride layer through the via, and completely removing the silicon substrate exposing the GaN device. Preferably, the material of the stiffener layer comprises silicon, such as silicon, silicon-germanium, or silicon-carbide.

Method for bonding of group III-nitride device-on-silicon and devices obtained thereof

Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.

Methods for embedding conducting material and devices resulting from said methods

A method for defining regions with different surface liquid tension properties on a substrate is disclosed. The method includes: providing a substrate with a main surface having a first surface liquid tension property that is at least partially covered with a seed layer; forming at least one micro-bump on the seed layer leaving part of the seed layer exposed; patterning the exposed seed layer to expose part of the main surface; forming at least one closed-loop structure that encloses a region of the main surface and the at least one micro-bump; and chemically treating the main surface of the substrate to provide on a surface of at least one closed-loop structure and the at least one micro-bump a second surface liquid tension property. The second surface liquid tension property is substantially different from the first surface liquid tension property of the main surface and is liquid phobic.

Method for self-assembly of substrates and devices obtained thereof

A method for providing an oxide layer on a semiconductor substrate is disclosed. In one aspect, the method includes obtaining a semiconductor substrate. The substrate may have a three-dimensional structure, which may comprise at least one hole. The method may also include forming an oxide layer on the substrate, for example, on the three-dimensional structure, by anodizing the substrate in an acidic electrolyte solution.

Method for providing oxide layers

The present invention is related to a method for aligning and bonding a first element () and a second element (), comprising:

Method for aligning and bonding elements and a device comprising aligned and bonded elements

An electrostatically actuatable micro electromechanical device is provided with enhanced reliability and lifetime. The electrostatically actuatable micro electromechanical device comprises: a substrate, a first conductor fixed to the top layer of the substrate, forming a fixed electrode, a second conductor fixed to the top layer of the substrate, and a substrate area. The second conductor is electrically isolated from the first conductor and comprises a moveable portion, suspended at a predetermined distance above the first conductor, the moveable portion forming a moveable electrode which approaches the fixed electrode upon applying an actuation voltage between the first and second conductors. The selected substrate surface area is defined as the orthogonal projection of the moveable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess is provided in at least the top layer of the substrate.

Growing community of inventors

Marseilles, France

Philippe Soussan