Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (grenoble 2) Sas

Philippe Rodriguez

Fabrice Nemouchi

Elodie Ghegin

Abdelkader Aliane

Jean-Michel Hartmann

Willy Ludurczak

Zouhir Mehrez

Charles Baudot

Bertrand Szelag

Pablo Acosta Alba

Meryl Brothier

Yann Bogumilowicz

Méryl Brothier

Patrice Gergaud

Christophe Jany

Dominique Moulinier

Carine Ablitzer

Seifeddine Zhiou

Andréa-Carolina Quintero Colmena

The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including:

Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing

A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.

Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrate

A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.

Contacting area on germanium

A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.

A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.

Process for producing a component comprising III-V materials and contacts compatible with silicon process flows

A production of contact zones for a transistor device including the steps of:

Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor material

A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InGaAs material, the contact includes an Ni&#x2014;InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InGaAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.

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The invention relates to a jet spouted bed reactor, comprising a cylindrical area, a gas injection pipe at the base of the cylindrical area, and a transition area, connecting the upper end of the pipe to the base of the cylindrical area, this transition area having a convex profile in a plane extending through the axis (YY') of flow of a fluid in the pipe.

Growing community of inventors

Rives, France

Philippe Rodriguez