Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Imec

Universiteit Gent

Philippe Regreny

Laurent Grenouillet

Jean-Marc Fedeli

Lea Di Cioccio

Günther Roelkens

Dries Van Thourhout

Léa Di Cioccio

Regis Orobtchouk

Pedro Rojo-Romeo

Guy Hollinger

Guillaume Saint-Girons

Damien Bordel

Liu Liu

Ludovic Largeau

Gilles Patriarche

Genevieve Grenet

Geneviève Grenet

Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (), a photodetection structure () and a light source structure (), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers. b) bonding the structure obtained by step a) to the said waveguide structure (), the light source structure being in contact with the said waveguide structure (), c) removing the substrate () from the structure obtained by step b), d) etching the structure () obtained by step c) to define the at least one photodetector (), e) etching the structure obtained by step d) to define the at least one light source (), f) forming electrodes () on the least one photodetector () and on the least one light source ().

Method of producing a photonic device and corresponding photonic device

A method for producing a solid-state semiconducting structure, includes steps in which:

Epitaxial solid-state semiconducting heterostructures and method for making same

A method relaxing a strained thin film, secured via a first main face of an initial support, the second main face of the thin film being a contact face. The method supplies an intermediate support including a polymer layer having a main free contact face, the polymer's thermal expansion coefficient being greater than that of the thin film, adhesively brings into contact the contact face of the strained thin film with the contact face of the polymer layer, eliminates the initial support, realizing relaxation of the thin film through formation of wrinkles and revealing the first main face of the thin film, increases the polymer layer temperature to stretch the relaxed thin film and eliminate the wrinkles, secures the first main face of the thin film with one face of a receiving substrate, and eliminates the intermediate support to obtain a relaxed thin film integral with the receiving substrate.

Method for relaxing a stressed thin film

Growing community of inventors

Chasselay, France

Philippe Regreny