U.S. Philips Corporation

Other

Philippe P Riglet

Lionel Bouchard

Jacques-Ariel Sirat

Jean-Paul R Chane

Jaques-Ariel Sirat

Images having a moving pattern against a fixed or quasi-fixed background are segmented by determining a silhouette of the moving pattern, and forming a segmentation image filling the silhouette. On a pixel-by-pixel basis, differences are determined between the current image and previous images of a sequence, and compared with a threshold to form a binary image of background and useful zone. The boundaries of the useful zone are regularized, and irregularities in the useful zone and in the background are suppressed. A segmentation image is then formed within the silhouette.

Image segmentation device

A coding subassembly for images composed of at least one moving pattern against a fixed or quasi-fixed background, including circuits for constructing a base model representative of the useful zone of the said images, a coding circuit, and an associated decoding subassembly. The model constructing circuits include circuits for initial calibration and adaptation of the model and a circuit for determining the movement of characteristic points taken from the useful zone and a circuit for selecting at least one zone of particular interest inside the useful zone and determining its movement. The coding circuit includes a circuit for coding output signals from the initial calibration circuit, and a circuit for correcting any shifts in luminance or chrominance in zones alongside the borders of the said zone(s) of interest observed on either side of these borders.

Subassembly for coding images with refresh correction of the data to be

A method of forming an integrated circuit for the detection of infrared radiation comprising a semi-isolating substrate provided with a buried PIN photodiode, with a junction field effect transistor J-FET, whose gate is connected to the PIN photodiode, and with a resistor R connected to the transistor, this method including the growth of a first structure of epitaxial layers of semiconductor materials, in which the J-FET transistor is formed, the growth of a second structure of epitaxial layers of semiconductor materials, in which the PIN diode is formed, and the step of etching a pit, in which the second structure of layers is formed, characterized in that the step of etching the pit is effected after the growth of the first structure of epitaxial layers and is carried out through this structure down to the substrate, in that the growth of the second structure of epitaxial layers is localized in such a manner that this second structure is limited to the pit and in that its upper surface is copolanar with that of the first structure of layers.

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Limeil-Brevannes, France

Philippe P Riglet