Thomson-csf

Philippe Morel

Raymond Henry

Jacques Simon

Jean Doyen

Jean C Resneau

Jean F Carpentier

The invention concerns bidirectional optical fiber connections, and more particularly an optical coupling device between an emitting electroluminescent diode and a detecting photodiode, the optoelectronic component according to the invention comprising an electroluminescent diode called DEL sealed in a box of the transistor box type the cover of which carries a microlens centered on the optical axis of the box, while inside the box are integrated: a photodiode mounted at the side of the DEL and outside the optical axis, a semitransparent mirror and a mirror support, this support being machined so as to form a second mirror that reflects light to be detected towards the detecting diode; the novel component can be used in bidirectional optical connections, in computers and telephone exchange centers.

Bidirectional optoelectronic component operating as an optical coupling

A base comprising a metal mounting stud to which is fixed a locally metallized insulating plate of the beryllium oxide type. In order to very accurately position active or passive component or components on the insulating plate, at least one connecting electrode comprises at least one abutment zone against which is placed at least one component. This makes it possible to obtain a very good reproducibility of the electrical performances of the device. Such a mounting is applied to ultra-high frequency devices, particularly those incorporating a pre-matching circuit.

Base for encapsulating components with coplanar electrodes

A method of fabricating highly miniaturized semiconductor devices which must be electrically but not thermally insulated from ground, by replacing the conventional disk of beryllium oxide with a portion of the substrate itself so as to decrease the thermal resistance. To this end one starts with a disk of 'PIN'-structure silicon. On one of its faces (P or N as the case may be) one deposits by epitaxy, or forms by successive diffusions, the active layers of the device and the surdoped zones. The 'PIN' diode may be reverse biased if it is desired to create a capacity between active layers and metallic support serving as heat sink. Diodes and transistors in high-frequency microelectronics obtained by the method are also described.

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Paris, France

Philippe Morel