Commissariat a L'energie Atomique

Commissariat a L'energie

Philippe Laporte

Michel Heitzmann

Louise Peccoud

Jean Lajzerowicz

A device for the separation of wafers bonded by forces of attraction. The device includes at least one assembly of at least two flexible elements whose width in a direction perpendicular to the planes of the wafers is less than the largest gap between the ends of the wafers.

Device for separating wafers and process for using said device

Process for producing an integrated circuit stage formed from a dielectric layer (1) covering interconnection lines (5) and connection points (4), which connect the said lines (5) to conductive parts (6) on the opposite side of the dielectric layer (1). The process consists of forming all the dielectric layer (1) during a single step and then successively etching cavities at the locations of the connection points and the interconnection lines by means of two successively positioned masks and then filling the cavities in a single step with conductive material in order to simultaneously form connection points (4) and interconnection lines (5).

Process for etching and depositing integrated circuit interconnections

Enclosure for the treatment of substrates by the reactive plasma method, consisting in a known manner of an inlet and an outlet (12) for the circulation of a reactive gas at low pressure, a base supporting the substrate (10) to be treated being placed between two electrodes, one of which (3) is at the ground potential and the other (4) or radio-frequency electrode is brought to an alternative potential such as to create an electrical discharge in the enclosure. It is characterized in that the enclosure is metallic and lined by plasma torch spraying with a protective coating (2) of alumina (Al.sub.2 0.sub.3) of a thickness of about 300 micrometers.

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Sassenage, France

Philippe Laporte