France Telecom

Philippe Krauz

Elchuri K Rao

A method of making a component presenting at least one integrated electro-optical and/or photonic function, in which at least one dielectric layer of doped SiO.sub.x is deposited on a quantum well layer based on III/V materials, and in which the resulting sample is heat treated. The thickness of said dielectric layer, the nature of the dopant [isoelectronic, activating or blocking, and/or electronically active of n-type or of p.sub.-- type], and the concentration of the doping, and also the conditions of heat treatment, in such a manner as to confer the desired electro-optical and/or photonic properties to the component.

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Creteil, France

Philippe Krauz