U.S. Philips Corporation

Alcatel Optronics

Philippe Jarry

Pierre Guittard

Alphonse Ducarre

Leon Goldstein

Jean-Louis Gentner

Claude Piaget

Bernard Guillemet

Mohamed L Haji

Lazhar Haji

In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.

Method of etching a substrate by means of chemical beams

A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate serving as input for the radiation and as a rear surface of the device. The front surface of the device supports a plurality of control electrodes and at least one output electrode. The window layer and the storage layer of the CCD are made of a binary compound AB. The sensitive layer is made of an n-ary compound (A,X,Y . . . ).sub.III (B,M,N . . . ).sub.V having a larger forbidden energy band and a smaller absorption limit wavelength than the window and storage layers. The three layers of the device are formed by epitaxial growth on a substrate. The substrate is a layer of the binary compound AB coated with an epitaxial layer of the n-ary compound. The epitaxial substrate layer is a chemical blocking layer. The substrate and the chemical blocking layer are subsequently removed chemically.

Method of manufacturing an infrared-sensitive charge coupled device

A vitreous semiconductor supporting structure obtained by connecting semiconductor layers to a vitreous support constituted by at least two glasses. The semiconductor layers are constituted by an electrically and optically active n-ary III-V compound layer (3) and optional complementary layers for passivation (4), index adaptation (6), and protection (7). To keep the active layer in a compression state and optimize its electrical properties, the structure includes at least two glasses, an intermediate glass (15) providing thermoelastic properties and a supporting glass (16) providing a high softening temperature.

Vitreous semiconductor supporting structure and device realized with

An electron emitting device including an active semiconductor layer having a surface from which electrons are emitted. The layer is doped with impurity atoms at a density which decreases with distance from the surface.

Semiconductor device for the vacuum-emission of electrons

In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium, the last growth melt is wiped off and the structure is cooled to a temperature from room temperature to 200.degree. C. During cooling, the structure's upper surface is contacted with a liquid gallium melt in such a manner that the doping elements present in the few remaining drops of the last growth melt not removed by the wiping off are dissolved.

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Philippe Jarry