The University of Chicago

Arch Development Corporation

Uchicago Argonne, LLC

Philippe Guyot-Sionnest

Emmanuel Lhuillier

Moonsub Shim

Conjun Wang

Sean E Keuleyan

Jeffrey W Elam

Matthew M Ackerman

Xin Tang

Photodetectors based on colloidal quantum dots and methods of making the photodetectors are provided. Also provided are methods for doping films of colloidal quantum dots via a solid-state cation exchange method. The photodetectors include multi-band photodetectors composed of two or more rectifying photodiodes stacked in aback-to-back configuration. The doping methods rely on a solid-state cation exchange that employs sacrificial semiconductor nanoparticles as a dopant source for a film of colloidal quantum dots.

Multi-band infrared imaging using stacked colloidal quantum-dot photodiodes

Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 &#x3bc;m to 12 &#x3bc;m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

Mid-infrared photodetectors

A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.

Atomic layer deposition for functionalizing colloidal and semiconductor particles

A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.

Growing community of inventors

Chicago, IL, United States of America

Philippe Guyot-Sionnest