Monolithic Power Systems, Inc.

Ion Beam Services

Cnm - Csic

Mersen France Sb Sas

Philippe Godignon

Laurent Roux

Frank Torregrosa

Franck Sarrus

Ignacio Cortes Mayol

Victor Soler

Jose Rebollo

Thierry Rambaud

Jean-François De Palma

A MOSFET device arranged on a substratehaving first and second heavily-doped stripsandrespectively covered by first and second contactsand, these two strips being spaced apart by a channelthat also appears on the substrate, the channel being covered by a dielectric layer, itself surmounted by a third contact. The channelincorporates a thin filmlightly doped with dopant atoms of a same type as the channel, at the interface with the dielectric layer, the dopant atoms being distributed on both sides of the interface.

Device for improving the mobility of carriers in a MOSFET channel on silicon carbide

A field-plate trench FET having a drain region, an epitaxial layer, a source region, a gate conductive layer formed in a trench, a field-plate dielectric layer formed on vertical sidewalls of the trench, a well region formed below the trench, a source contact and a gate contact. When the well region is in direct physical contact with the gate conductive layer, the field-plate trench FET can be used as a normally-on device working depletion mode, and when the well region is electrically isolated from the gate conductive layer by the field-plate layer, the field-plate trench FET can be used as a normally-off device working in an accumulation-depletion mode.

Field-plate trench FET and associated method for manufacturing

Growing community of inventors

Valldoreix, Spain

Philippe Godignon