Consejo Superior De Investigaciones Cientificas

Centre National De La Recherche Scientifique

Universite Claude Bernard – Lyon1

Institut National Des Sciences Appliquees De Lyon

Ecole Centrale De Lyon

Mersen France Sb Sas

Ferraz

Centro De Investigacion Biomedica En Red (ciber)

Centro Nacional De Microelectronica

Philippe Godignon

Dominique Tournier

Jean-François De Palma

Franck Sarrus

Rosa Villa Sanz

Florian Chevalier

José Millan

Thierry Rambaud

Jose Millan

Juan Fernandez

Rene Deshayes

Jean-Francedillaois De Palma

Gemma Rius Suñé

Elisabet Prats Alfonso

David Sanchez Sanchez

Miquel Vellvehi Hernandez

Xavier Jorda Sanuy

Xavier Perpiña Giribet

The present invention refers to a method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate, the method being based on exfoliation induced by hydrogen bubbles produced in the electrolysis of water.

Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate

The invention concerns a method for producing a field effect transistor having a trench gate comprising: &#x2014;the forming () of at least one trench () in a semi-conductive substrate () having a first type of conductivity, said substrate comprising two opposing faces called front face and rear face, &#x2014;the primary implantation () of ions having a second type of conductivity so as to implant each trench of the substrate to form an active gate area, &#x2014;the depositing () of a layer of polycrystalline silicon having the second type of conductivity on the implanted active gate area, &#x2014;the oxidation () of the layer of polycrystalline silicon, and &#x2014;the metallization () of the substrate on the front and rear faces of same in order to form active source and drain areas.

Method of producing a junction field-effect transistor (JFET)

A system for supplying direct current and DC voltage is provided. The system comprise a first supply branch having a first DC voltage source and a power field-effect transistor of a current limiter which are connected in series, and a second supply branch having a second DC voltage source. The power transistor has a current/voltage characteristic with a first inverse polarization area without current limitation, and a second conduction area with current limitation based on a current threshold. The power field-effect transistor is connected to the first voltage source with an inverse polarization when the voltage source of the first branch is operating normally.

System for supplying direct current and DC voltage protected by a current limiter, and method for protecting same

A current limiter component constituted by a semiconductor bar or wafer doped in four layers (P, N, P, N) between its anode and cathode. The doping characteristics and the dimensional characteristics of the bar are adjusted to obtain a characteristic current to voltage curve which initially increases as voltage and current increases in the manner of a diode followed by a part constituting a current limiting plateau wherein the plateau reflects that the current remains fixed until the voltage reaches a breakdown voltage.

Current limiter component

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Barcelona, Spain

Philippe Godignon