Stmicroelectronics S.a.

Stmicroelectronics France

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.r.l.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics International N.v.

Stmicroelectronics (alps) Sas

Philippe Galy

Jean Jimenez

Sotirios Athanasiou

Johan Bourgeat

Thomas Bedecarrats

Renan Lethiecq

Christophe Entringer

Louise De Conti

Boris Heitz

Thomas Benoist

Laurent Grenouillet

Philippe Sirito-Olivier

Vivek Asthana

Mikael Rien

Nicolas Guitard

Sylvain Engels

Malathi Kar

Hassan El Dirani

Ghislain Troussier

Julien Le Coz

Alexandre Dray

Laurent Micheli

Patrice Dehan

Frank Jezequel

Mickael Rien

Jean-Francois Veniant

Mohammed Tmimi

Valerian Cincon

Yves Mazoyer

Jean-Francois Venient

An electrostatic discharge protection device is formed using only electrically connected transistors. The transistors include: a first MOS-type transistor forming a clamping circuit coupled between first and second supply nodes; a second MOS-type transistor coupled between the first supply node and a gate terminal of the first MOS-type transistor; and a third MOS-type transistor having a first gate terminal coupled to a gate terminal of the second MOS-type transistor, a second gate terminal coupled to one of the first and second supply nodes, and first and second conduction terminals coupled to the second supply node.

Electrostatic discharge protection device

A method includes generating, by a first spiking neuron, an event detection signal indicating a time of detection of an event in a data flow. The event detection signal is transmitted from the first spiking neuron to a second spiking neuron. The second spiking neuron generates a spike delayed, with respect to the time of detection of the event, according to an amplitude of the event. The delayed spike is included in a coded signal.

Coding of an event in an analog data flow with a first event detection spike and a second delayed spike

A cell includes a Z-FET-type structure that is formed with two front gates extending over an intermediate region between an anode region and a cathode region. The individual front gates of the two front gates are spaced apart by a distance that is shorter than 40% of a width of each individual front gate.

Memory cell

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Thermal sensor circuit

An artificial-neuron device includes an integration-generation circuit coupled between an input at which an input signal is received and an output at which an output signal is delivered, and a refractory circuit inhibiting the integrator circuit after the delivery of the output signal. The refractory circuit is formed by a first MOS transistor having a first conduction-terminal coupled to a supply node, a second conduction-terminal coupled to a common node, and a control-terminal coupled to the output, and a second MOS transistor having a first conduction-terminal coupled to the input, a second conduction-terminal coupled to a reference node at which a reference voltage is received, and a control-terminal coupled to the common node. A resistive-capacitive circuit is coupled between the supply node and the reference node and having a tap coupled to the common node, with the inhibition duration being dependent upon a time constant of the resistive-capacitive circuit.

Integrated artificial neuron device

An electronic circuit includes a first electronic component formed above a buried insulating layer of a substrate and a second electronic component formed under the buried insulating layer. The insulating layer is thoroughly crossed by a semiconductor well. The semiconductor well electrically couples a terminal of the first electronic component to a terminal of the second electronic component.

Electronic circuit

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal imposes the drain-source current of the first transistor.

A silicon-on-insulator semiconductor substrate supports rows extending in a direction. Each row includes complementary MOS transistors and associated contact regions allowing back gate of the complementary MOS transistors to be biased. All transistors and associated contact regions of a given row are mutually isolated by a first trench isolation. Each row is bordered on opposed edges extending parallel to said direction by corresponding second trench isolations that are shallower than the first trench isolation.

Integrated circuit with double isolation of deep and shallow trench-isolation type

A BiMOS-type transistor includes a gate region, a channel under the gate region, a first channel contact region and a second channel contact region. The first channel contact region is electrically coupled to the gate region to receive a first potential. The second channel contact region is electrically coupled to receive a second potential.

BiMOS transistor

A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.

Transistor structure

A semiconductor substrate includes a doped region having an upper surface. The doped region may comprise a conduction terminal of a diode (such as cathode) or a transistor (such as a drain). A silicide layer is provided at the doped region. The silicide layer has an area that only partially covers an area of the upper surface of the doped region. The partial area coverage facilitates modulating the threshold voltage and/or leakage current of an integrated circuit device.

Electronic circuit with electrostatic discharge protection

An integrated artificial neuron device includes an input signal node, an output signal node and a reference supply node. An integrator circuit receives and integrates an input signal to produce an integrated signal. A generator circuit receives the integrated signal and, when the integrated signal exceeds a threshold, delivers the output signal. The integrator circuit includes a main capacitor coupled between the input signal node and the reference supply node. The generator circuit includes a main MOS transistor coupled between the input signal node and the output signal node. The main MOS transistor has a gate that is coupled to the output signal node, and a substrate that is mutually coupled to the gate.

Binary data is processed through a differential pre-encoder, which includes a simple modulo-2 addition. This step is used to cancel the propagation error that can be introduced by duo-binary modulation and to simplify demodulation. Next the duo-binary encoder introduces controlled Inter Symbol Interference between a previously sent bit and a present bit to compress the spectral density closer to the DC. Next a 60-GHz carrier is modulated and transmitted over differential transmission lines.

Growing community of inventors

Le Touvet, France

Philippe Galy