Centre National De La Recherche Scientifique

Philippe De Mierry

Gilles Nataf

Philippe Vennegues

Florian Tendille

Sébastien Chenot

The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in:

Method for manufacturing a semiconductor material including a semi-polar III-nitride layer

The invention relates to a method for the production of a light-emitting diode, characterized in that the method comprises a step of preparing a light-emitting layer () on a front face of a support (), said emitting layer comprising at least two adjacent quantum wells () emitting at different wavelengths, said quantum wells () being in contact with the front face of the support. According to the invention, the step in which the light-emitting layer is deposited comprises a sub-step consisting in locally varying the temperature of a rear face of the support opposite the front face such that the front face of the support comprises at least two zones at different temperatures.

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Valbonne, France

Philippe De Mierry