Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Alcatel Vacuum Technology France

Philippe Cormont

Pierre-Yves Thro

Philippe Belleville

Olivier Sublemontier

Benoit Barthod

Charlie Vacher

Guy Cheymol

François Champonnois

Martin Schmidt

Sébastien Lambert

Christian Lascoutouna

Pascal Wodling

Marie Geleoc

Mathilde Pfiffer

Laurent Gallais

Christophe Hubert

Jean-Luc Rullier

A method for improving the properties of resistance to laser flux of an optical component, comprising a step consisting in bringing the component into contact with an aqueous solution comprising at least one hydroxide of an alkaline metal or an alkaline earth metal in a quantity of between 5 and 30 mass % and having a temperature T of between 50 and 100&#xb0; C.

Method for improving the resistance to laser flux of an optical component

Method for manufacturing an optical component, including a substrate made of a fusible material, includes the following steps a) and b) of steps a), b) and c), or steps a), b), c) and d): a) roughing; b) fine grinding; c) polishing; and d) finishing. The method includes steps, subsequent to any one of steps b), c) and/or d): e) inspecting the optical surface of the optical component; f) detecting and locating at least one surface defect to be eliminated; g) for each surface defect, applying a laser beam to an area emcompassing the defect, so as to produce a local remelting of the fusible material, and to form, at the location of the defect, an area of material remelted; h) polishing the optical surface including at least one area of remelted material, to produce a polished optical surface free of surface defects, and continuing with steps c) and d).

Method for manufacturing an optical component for eliminating surface defects

The invention concerns a method for laser ablation of a surface coating from a wall, such as a painted wall finish, for example in a nuclear plant to be decontaminated, and a device for implementing said method. The inventive ablation method includes sweeping shots on the coating of at least one pulsed laser beam with a laser beam quality factor Mless than 20, and characterized in that it comprises a direct control of said shots by optical deflection, such that the impact zones (I, I, I,) of said shots on said coating are disjointed or substantially adjacent with minimized overlapping.

Method and device for laser ablation of a surface coating from a wall, such as a coat of paint in a nuclear plant

The invention relates to a method and device for photolithography by extreme ultraviolet radiation, using a source resulting from the excitation of plasma by several lasers. The object which is to be photoengraved is displaced behind an irradiation window. The radiation is comprised of N successive current impulses whose surface energy is measured. In particular, each laser emits a quantum of energy having a given duration at each outset. The surface energy of the radiation received by the object in the course of the last N&#x2212;1 pulses is thus added up for an niteration of an iterative method. The photosensitive object is displaced from a distance equal to a fraction 1/N of the width of the irradiation window according to the axis of said translation. The above-mentioned sum is subtracted from the amount of total energy required for the photoengraving method. The remaining amount of energy to be provided in order to achieve the total amount of energy and from there, the remaining pulse quanta number to be produced for an npulse is determined by selecting more particularly the corresponding number of laser sources to be turned on. The lasers thus selected are then triggered in order to deliver a pulse.

Method and device for lithography by extreme ultraviolet radiation

The device comprises a device () for creating an essentially linear target () in an evacuated space where laser beams () are focused, the target being suitable for interacting with the focused laser beams () to emit a plasma emitting radiation in the extreme ultraviolet. A receiver device () receives the target () after it has interacted with the focused laser beams (), and a collector device () collects the EUV radiation emitted by the target (). The focusing elements () for focusing the laser beams on the target () are arranged in such a manner that the laser beams () are focused on the target () laterally, being situated in a common half-space relative to the target () and being inclined at a determined angle lying in the range about 60&#xb0; to about 90&#xb0; relative to a mean collection axis () perpendicular to the target (). The collector device () is disposed symmetrically about the mean collection axis () in the half-space containing the laser beams () focused on the target () and inside a conical space () centered on the mean collection axis () with a vertex situated at the target () and a half-angle at the vertex that is less than the angle of inclination of the focused laser beams () relative to the mean collection axis (). The device is suitable for use as a source for EUV radiation in lithography for fabricating integrated circuits.

Apparatus for generating light in the extreme ultraviolet and use in a light source for extreme ultraviolet lithography

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Le Bouscat, France

Philippe Cormont