Centre National De La Recherche Scientifique

Nanyang Technological University

Université De Lille

Thales Solutions Asia Pte Ltd

Thales

Université Grenoble Alpes

Université De Limoges

Université Des Sciences Et Technologies De Lille 1

L'institut Polytechnique De Grenoble

Philippe Coquet

Beng Kang Tay

Philippe Ferrari

Stéphane Bila

Dominique Baillargeat

Emmanuel Pistono

Florence Podevin

Mathieu Cometto

Kamel Frigui

Manuela Loeblein

Thomas Merlet

Jianxiong Wang

Matthieu Pawlik

Edwin Hang Tong Teo

Jérôme Foncin

Tony Siu Hon Tsang

A nanostructure transfer method is provided. The method includes providing a first substrate () having thereon a plurality of nanostructures (), the nanostructures () extending away from the first substrate (). A solder material () is deposited on distal ends of the nanostructures (). A second substrate () having thereon a first metal layer () is provided. The solder material () is bonded to the first metal layer (), thereby attaching the nanostructures () to the second substrate (). The attached nanostructures () are then released from the first substrate ().

Nanostructure transfer method

The invention relates to a composite material based on boron nitride (BN(C)) in the form of a continuous structure; and a phase change material (PCM) incorporated within said continuous BN(C) structure and is embedded within a polymer layer, a process for manufacturing same, and the components that comprise same.

Thermal material with high capacity and high conductivity, method for preparing same and components comprising same

An interposer () and a substrate () incorporating the interposer () are provided. The interposer () includes one or more layers () and a cavity () defined in the one or more layers (), the cavity () being configured as a waveguide for propagation of electromagnetic waves.

Interposer and substrate incorporating same

Growing community of inventors

Singapore, Singapore

Philippe Coquet