Alcatel

Alcatel N.v.

Avanex Corporation

Philippe Brosson

Claude Artigue

Denis Leclerc

Joel Jacquet

François Dorgeuille

Alexis Lestra

Jean-Paul Hebert

Jacques Benoit

Stéphane Rabaron

Frédéric Pommereail

The invention relates to an optical amplifier device including a semiconductor optical amplifier component () including a guide active structure (), characterized in that the guide active structure () is subjected to a stress external to said component () coming from integrating said component () in said device, and in that said component () has a controlled sensitivity to the state of polarization of the light to be amplified in order to render the gain of said optical amplifier device insensitive to the polarization of said light to be amplified.

Optical amplifier device

The invention relates to a light emitter device comprising an integrated component having a laser section provided with an oscillator section designed to supply a laser wave, and a modulator section. In order to control the light frequency of the emitted modulated wave, an electronic circuit controls the current of the laser section in response to a measurement of the amplitude of the modulation of the voltage induced across the terminals of the laser section by the modulation section.

Light emitting device having an integrated component including at least

A tunable multisection laser of the invention includes an active layer (C2) which is thicker in a phase tuning section (S3) and in a grating section (S2) including a Bragg distributed reflector (R) having a controllable equivalent pitch than it is in a light amplification section (S1). The invention is particularly applicable to making components for telecommunications by means of optical fibers.

Tunable semiconductor laser

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Philippe Brosson