Stmicroelectronics (crolles 2) Sas

Centre National De La Recherche Scientifique

Université Paris-saclay

Université Paris—sud

Centre National De La Recherche Scientifique-cnrs

Philippe Boucaud

Frédéric Boeuf

Fabrice Semond

Moustafa El Kurdi

Mathias Prost

Anas Elbaz

Abdelhanin Aassime

A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

Germanium-on-silicon laser in CMOS technology

A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

Structure comprising a strained semiconductor layer on a heat sink

Growing community of inventors

Paris, France

Philippe Boucaud