Infineon Technologies Ag

Qimonda Ag

Adesto Technologies Corporation

Altis Semiconductor, Snc

Altis Semiconductor

Adesto Technology Corporation

Adesto Technologies France Sarl

Philippe Blanchard

Jeffrey Allan Shields

Yi Ma

Wei Ti Lee

Foroozan Sarah Koushan

Mark D Kellam

Gill Yong Lee

Chakravarthy Gopalan

John Ross Jameson

Janet Wang

In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.

Resistive switching devices having alloyed electrodes and methods of formation thereof

According to one embodiment of the present invention, a memory device includes a composite structure including a resistivity changing layer and an electrode layer being arranged on or above the resistivity changing layer. The resistivity changing memory device further includes a protection layer being arranged on or above the composite structure, the protection layer protecting the electrode layer against electromagnetic waves.

Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit

According to one embodiment of the present invention, a method of manufacturing an integrated circuit including a memory device includes, generating a solid electrolyte layer including a first solid electrolyte layer area and a second solid electrolyte layer area, the height of the top surface of the solid electrolyte layer within the second solid electrolyte layer area being lower than the height of the top surface of the solid electrolyte layer within the first solid electrolyte layer area; generating a conductive layer above the top surfaces of the first solid electrolyte layer area and the second solid electrolyte layer area; planarizing the top surface of the conductive layer such that the solid electrolyte layer is exposed within the first solid electrolyte layer area, however is covered by the conductive layer within the second solid electrolyte layer area; patterning the exposed solid electrolyte layer within the first solid electrolyte layer area.

Method of manufacturing an integrated circuit, an integrated circuit, and a memory module

According to one embodiment of the present invention, an integrated circuit includes a plurality of resistivity changing memory cells, and a plurality of conductive elements being electrically connected to the resistivity changing memory cells, at least some of the conductive elements comprising copper.

Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit

A method of forming a magnetoresistive junction in a process of manufacturing a magnetoresistive memory cell includes providing a semiconductor substrate having at least one via contact layer on a main surface thereof, depositing a layered structure of magnetoresistive junction layers on the via contact layer, depositing an etch stop layer on the layered structure of magnetoresistive junction layers, depositing at least one hard mask layer on the etch stop layer, patterning and etching the hard mask layer to create a hard mask, removing of polymer residuals from the hard mask, etching of the etch stop layer, and etching the layered structure of magnetoresistive junction layers to create the magnetoresistive junction. The etching stops at the etch stop layer.

Method of forming magnetoresistive junctions in manufacturing MRAM cells

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Moigny sur Ecole, France

Philippe Blanchard