Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Altis Semiconductor

Philippe Blaise

Elisa Vianello

Gabriel Molas

Faiz Dahmani

Laurent Grenouillet

Marios Barlas

Benoit Sklenard

Benoît Sklenard

Rémy Gassiloud

Boubacar Traore

Benoït Sklenard

A resistive non-volatile memory cell includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, the memory cell being capable of reversibly switching between: &#x2014;a high resistance state obtained by applying a first bias voltage between the first electrode and the second electrode; and&#x2014;a low resistance state obtained by applying a second bias voltage between the first electrode and the second electrode; the oxide layer including a switching zone forming a conduction path prioritised for the current passing through the memory cell when the memory cell is in the low resistance state. The oxide layer includes a first zone doped with aluminium or silicon, the aluminium or silicon being present in the first zone with an atomic concentration that is selected so as to locate the switching zone outside the first zone.

Oxide-based resistive non-volatile memory cell and method for manufacturing same

A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

Resistive random access memory device

A device for selecting a storage cell, includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, wherein the oxide layer is doped with a first element from column IV of the periodic table.

Device for selecting a memory cell

A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.

Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal

A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

Growing community of inventors

Grenoble, France

Philippe Blaise