Infineon Technologies Ag

Philipp Sebastian Koch

Oliver Humbel

Angelika Koprowski

Gerhard Schmidt

Juergen Steinbrenner

Markus Kahn

Christian Maier

Hans-Joachim Schulze

Edward Fuergut

Stephan Pindl

Holger Ruething

Josef-Georg Bauer

Erwin Lercher

Jens Brandenburg

Diana Car

Sebastian Kremp

Thomas Kurzmann

A power semiconductor device includes a semiconductor body having a front side surface, and a first passivation layer arranged above the front side surface. The first passivation layer is a polycrystalline diamond layer.

Power semiconductor device and method

A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Semiconductor device with first and second portions that include silicon and nitrogen

A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 &#x3bc;m. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.

Ppower semiconductor device with anticorrosive edge termination structure

A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Semiconductor device with a portion including silicon and nitrogen and method of manufacturing

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Gelugor, Malaysia

Philipp Sebastian Koch