Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Old Gmbh

Philipp Drechsel

Werner Bergbauer

Peter Stauss

Thomas Lehnhardt

Jürgen Off

Patrick Rode

Tobias Meyer

Alvaro Gomez-Iglesias

Bastian Galler

Asako Hirai

Lise Lahourcade

Joachim Hertkorn

Juergen Off

Peter Stauβ

Anna Nirschl

Tobias Niebling

Matthias Sabathil

Lutz Höppel

Matthias Peter

Alexander Frey

Martin Strassburg

Simeon Katz

Martin Mandl

Martin Straβburg

Christopher Kölper

Peter Stauß

Peter Strauß

Xiaojun Chen

Heng Wang

Jong Ho Na

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Method for producing a nitride compound semiconductor component

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.

Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip

A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.

Component having enhanced efficiency and method for production thereof

An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

Optoelectronic semiconductor chip

The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Component having a multiple quantum well structure

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

What is specified is a method for producing a layer structure () as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (), which has a silicon surface (), b) deposition of a first layer sequence (), which comprises a seeding layer () containing aluminum and nitrogen, on the silicon surface () of the carrier () along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (), c) three-dimensional growth of a 3D-GaN layer (), which is formed with gallium nitride, on a top surface () of the first layer sequence () which is remote from the silicon surface (), d) two-dimensional growth of a 2D-GaN layer (), which is formed with gallium nitride, on the outer surfaces () of the 3D-GaN layer () which are remote from the silicon surface ().

Method for producing a layer structure as a buffer layer of a semiconductor component and layer structure as a buffer layer of a semiconductor component

A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.

Semiconductor layer sequence and method for producing a semiconductor layer sequence

A method of producing a semiconductor layer sequence includes providing a growth substrate having a growth surface on a growth side, growing a first nitride semiconductor layer on the growth side, growing a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer includes at least one opening or at least one opening is produced in the second nitride semiconductor layer or at least one opening is created in the second nitride semiconductor layer during the growing process, removing at least one part of the first nitride semiconductor layer through the openings in the second nitride semiconductor layer, and growing a third nitride semiconductor layer on the second nitride semiconductor layer, wherein the third nitride semiconductor layer covers the openings at least in places.

Method of producing a semiconductor layer sequence and an optoelectronic semiconductor component

An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.

Optoelectronic component with a layer structure

A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlInGaN with 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and x+y&#x2266;1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.

Method for producing a nitride compound semiconductor device

A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Method for producing a light-emitting diode

A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.

Growing community of inventors

Wuppertal, Germany

Philipp Drechsel