Entegris, Inc.

Advanced Technology Materials, Inc.

Mst Technology Gmbh

Philip S H Chen

Thomas H Baum

Bryan Clark Hendrix

Jeffrey F Roeder

William Hunks

Chongying Xu

Tianniu Chen

Matthias Stender

Frank DiMeo, Jr

Ing-Shin Barry Chen

Jeffrey W Neuner

James J Welch

Gregory T Stauf

Mackenzie E King

Shawn D Nguyen

Robert Wright, Jr

Weimin Li

Michele Stawasz

Melissa A Petruska

David Kuiper

Han Wang

Shuang Meng

Eric Condo

Leah Maylott

Dahye Kim

Jun-Fei Zheng

Scott L Battle

David Walter Peters

Steven Lippy

Sungsil Cho

Jae Eon Park

Soojin Lee

Richard Ulrich Assion

Woosung Jang

Dingkai Guo

Robert L Wright

Michele Stawacz

Ruben Remco Lieten

Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)) or tungsten hexacarbonyl (W(CO)) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of HO is utilized. This pulsing with HO vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)-based CVD processes.

Group VI metal deposition process

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Silicon precursor compounds and method for forming silicon-containing films

Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Methods for depositing tungsten or molybdenum films

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing Oand NHco-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Vapor deposition precursor compounds and process of use

Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula RRRu(0), wherein Ris an aryl group-containing ligand, and Ris a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Chemical vapor deposition processes using ruthenium precursor and reducing gas

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor

A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200&#xb0; C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Cobalt deposition selectivity on copper and dielectrics

A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

CVD Mo deposition by using MoOCl

A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.

Alloys of Co to reduce stress

A high dielectric constant (k&#x2265;40), low leakage current (&#x2264;10A/cmat 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

ALD processes for low leakage current and low equivalent oxide thickness BiTaO films

A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

Cobalt CVD

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Tellurium compounds useful for deposition of tellurium containing materials

Growing community of inventors

Bethel, CT, United States of America

Philip S H Chen