Sige Semiconductor (Europe) Limited

Sige Semiconductor, Inc.

Sigc Semiconductor (Europe) Limited

Philip Macphail

Jeremy Loraine

Stephen Joseph Kovacic

Jeffery Wojtiuk

Disclosed is a method and apparatus for amplitude modulation of an RF transmit signal using pulse width modulation to control an amount of energy within each period. The apparatus includes a signal processing circuit with an input port for receiving of information indicative of a carrier frequency and modulation data. The signal processing circuit has a first output port and a second output port for providing of output signals having a phase relationship therebetween. A power amplifier is provided for receiving the output signals and for generating a pulse width modulated signal in dependence thereon.

Transmit signal generator and method

A method of providing an impedance match for an integrated semiconductor circuit to other microwave elements is provided by allowing the selection of one of a plurality of impedance matching ratios between the circuit and other elements. The tunable impedance match comprises a microwave impedance transformer with at least a single primary winding, and a plurality of secondary windings, wherein the winding configuration is determined by an electrical switching apparatus allowing the secondary windings to be connected in series, parallel and combinations thereof to provide the required impedance matching. The method allows for both dynamic matching of an integrated semiconductor circuit for increased efficiency, and hence reduced power consumption, and directly matching said circuit to high impedance antennae etc.

Switched impedance transformer for semiconductor circuits

A circuit is disclosed having a first series circuit path including a first switching transistor, a cascode transistor disposed in cascode arrangement with the first switching transistor, a transformer, and a fourth switching transistor. The circuit also has a second series circuit path having a second switching transistor, the transformer, and a third switching transistor. Both the first series circuit path and the second series circuit path are coupled between a first voltage source and a second voltage source. The cascode transistor has a bias applied to a port thereof for limiting current flowing therethrough.

Analogue power control in a saturated amplifier

Within an amplifier circuit having an amplifying transistor, a boost voltage is presented at a port of the transistor. The amplifying transistor has a base, an emitter and a collector or a gate, a source, and a drain. A capacitor is provided in electrical communication with the transistor. A voltage source is provided for providing one of the collector and the source with a first voltage and for in a first mode of operation charging the first capacitor. Also within the circuit is a switch for switching between the first mode of operation and a second other mode of operation wherein the first capacitor and the voltage source cooperate to provide a voltage at one of the collector and the source in excess of the first voltage.

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Cherry Hinton, United Kingdom

Philip Macphail