International Business Machines Corporation

Crocus-technology Sa

Infineon Technologies North America Corp.

Infineon Technologies Ag

Qimonda Ag

Philip Louis Trouilloud

David William Abraham

Daniel Christopher Worledge

Anthony J Annunziata

Lucian Prejbeanu

William Joseph Gallagher

Joerg Dietrich Schmid

Chandrasekharan Kothandaraman

Ulrich Karl Klostermann

Wolfgang Raberg

John Casimir Slonczewski

Roger Hilsen Koch

Shouheng Sun

Snorri Thorgeir Ingvarsson

Michael C Gaidis

Janusz Jozef Nowak

John De Brosse

Stuart P Parkin

Philip Edward Batson

Sivananda K Kanakasabapathy

Timothy Joseph Chainer

John Kenneth DeBrosse

Solomon Assefa

Guohan Hu

Jonathan Zanhong Sun

Stuart S P Parkin

Arunava Gupta

Shinji Takayama

Anthony Paul Praino

Gang Xiao

Mark E Re

Bernell E Argyle

Rudolf Schafer

Philippe P Lecoeur

A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.

Multibit self-reference thermally assisted MRAM

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.

Structure for thermally assisted MRAM

The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.

Magnetic tunnel junction based chip identification

A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.

Thermally assisted MRAM with increased breakdown voltage using a double tunnel barrier

A technique is provided for a thermally assisted magnetoresistive random access memory device. The device has a synthetic antiferromagnetic layer disposed on an antiferromagnetic layer. The synthetic antiferromagnetic layer has a first ferromagnetic storage layer, a non-magnetic coupling layer disposed on the first ferromagnetic storage layer, and a second ferromagnetic storage layer disposed on the non-magnetic coupling layer. A non-magnetic tunnel barrier is disposed on the second ferromagnetic storage layer, and a ferromagnetic sense layer is disposed on the non-magnetic tunnel barrier. A first ferromagnetic critical temperature of the first ferromagnetic storage layer is higher than an antiferromagnetic critical temperature of the antiferromagnetic layer, is higher than a second ferromagnetic critical temperature of the second ferromagnetic storage layer, and is higher than a third ferromagnetic critical temperature of the ferromagnetic sense layer.

Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization

Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.

Magnetic materials having superparamagnetic particles

A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.

Parallel shunt paths in thermally assisted magnetic memory cells

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Norwood, NJ, United States of America

Philip Louis Trouilloud