Columbia University

Harvard College

Pohang University of Science and Technology Foundation

Samsung Electronics Co., Ltd.

Philip Kim

Colin P Nuckolls

Kenneth Shepard

Hongkun Park

Byung Hee Hong

Mikhail D Lukin

Ju Young Lee

James Hone

Trond Andersen

Cory Dean

Inanc Meric

Noah J Tremblay

Kwang S Kim

Jinseong Heo

Seongjun Park

Charles M Lieber

Ioannis Kymissis

Jason H Hafner

Minhyun Lee

Michael Louis Steigerwald

Marshall Cox

Donhee Ham

Barbaros Ozyilmaz

Soonwon Choi

Xavier Roy

Pablo Jarillo-Herrero

Bo Loren Dwyer

Chin Li Cheung

Igor Lovchinsky

Javier Sanchez

Elana K Urbach

Xuefeng Guo

Rivka Bekenstein

Ryan J Gelly

Giovanni Scuri

Dominik S Wild

Andrey Sushko

Susanne F Yelin

Chulho Lee

Seok Ju Kang

Alon Gorodetsky

Melinda Y Han

Dmitri Efetov

An optical device useful for spatial light modulation. The device comprises: a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength; a first electrode electrically connected to the semiconductor layer; a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength; a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength; wherein the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary.

Fast spatial light modulator based on atomically thin reflector

A light-emitting device includes a substrate including a photonic cavity and configured to function as a gate, an active layer including a two-dimensional material, a first conductive contact, and a second conductive contact. The wavelength range of light generated by the light-emitting device may be narrowed based on the photonic cavity being included in the substrate, and the intensity and wavelength range of the generated light may be controlled based on the substrate functioning as a gate.

Light-emitting device comprising photonic cavity

A method for probing the properties of nanoscale materials, such as 2D materials or proteins, via nanometer-scale nuclear quadrupole resonance (NQR) spectroscopy using individual atom-like impurities in diamond. Coherent manipulation of shallow nitrogen-vacancy (NV) color centers enables the probing of the NQR spectrum of nanoscale ensembles of nuclear spins. Measuring the NQR spectrum at different magnetic field orientations and magnitudes and fitting to a theoretical model allows for the extraction of atomic structural properties of the material with nanoscale resolution.

Nanoscale nuclear quadrupole resonance spectroscopy

A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2], where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.

Solid-state materials formed of molecular clusters and method of forming same

Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.

Electrical devices with graphene on boron nitride

A laminated graphene device is demonstrated as a cathode. In one example the devices include organic photovoltaic devices. The measured properties demonstrate work-function matching via contact doping. Devices and method shown also provide increased power conversion efficiency due to transparency. These findings indicate that flexible, light-weight all carbon devices, such as solar cells, can be constructed using graphene as the cathode material.

Graphene electrodes for electronic devices

An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.

Graphene device including a PVA layer or formed using a PVA layer

A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.

Locally gated graphene nanostructures and methods of making and using

Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.

Growth and applications of ultralong carbon nanotubes

High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes

The present invention generally relates to the fabrication of molecular electronics devices from molecular wires and Single Wall Nanotubes (SWNT). In one embodiment, the cutting of a SWNT is achieved by opening a window of small width by lithography patterning of a protective layer on top of the SWNT, followed by applying an oxygen plasma to the exposed SWNT portion. In another embodiment, the gap of a cut SWNT is reconnected by one or more difunctional molecules having appropriate lengths reacting to the functional groups on the cut SWNT ends to form covalent bonds. In another embodiment, the gap of a cut SWNT gap is filled with a self-assembled monolayer from derivatives of novel contorted hexabenzocoranenes. In yet another embodiment, a device based on molecular wire reconnecting a cut SWNT is used as a sensor to detect a biological binding event.

Sensing devices from molecular electronic devices

A method of producing carbon single wall nanotubes (SWNT) by CVD is disclosed. The SWNTs are grown on a metal-catalyzed support surface, such as a commercially available silicon tips for atomic force microscopes (AFM). The growth characteristics of the SWNTs can be controlled by adjusting the density of the catalyst and the CVD growth conditions. The length of the SWNTs can be adjusted through pulsed electrical etching. Nanotubes of this type can find applications in nanotubes structures with defined patterns and for nano-tweezers. Nano-tweezers may be useful for manipulating matter, such as biological material, on a molecular level.

Direct growth of nanotubes, and their use in nanotweezers

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New York, NY, United States of America

Philip Kim